Richard B. Fair

Research Interests

Microfluidic systems for lab-on-a-chip applications based on electrowetting technology

Bio

Dr. Fair is a Life Fellow of the IEEE and a Fellow of the Electrochemical Society. He has served as Associate Editor of the IEEE Transactions on Electron Devices (1990-1993) and is past Editor-In-Chief of the Proceedings of the IEEE (1993-2000). He received the IEEE Third Millennium Medal in 2000, and the 2003 Solid State Science and Technology Award from the Electrochemical Society. He has published 150 papers in technical journals, contributed chapters to 10 books, edited eight more books, and given over 115 invited talks.
Our research group will continue to be driven by applications for lab-on-a-chip technology. While funding for microfluidics devices and science is non-existent, applications in environmental engineering, biosensing, diagnostics, genomics, etc. continue to appear. Thus, we have created strategic alliances with faculty in ECE, CEE, chemistry, genomics, biochemistry, microsystems engineering, and computer science at Duke, DUHS, Harvard and Stanford as part of our new thrusts into applications-driven research in bio-fluidic systems. We have funding to glue these critical pieces together. We have also aligned with Advanced Liquid Logic for the development of a more stable electrowetting platform on which to develop applications. And we are working on an NSF grant with Nan Jokerst’s group and Krish’s on an adaptive lab chip to develop on-chip optical sensing and control. Additionally, we have DARPA funding with Stanford, Harvard, and ALL in developing a genomic engineering platform for synthetic biology. Also, we are starting a new NSF grant on airborne particle sensing with Desert Research Institute.

Education

• B.S.E.E. Duke University, 1964
• M.S.E.E. Pennsylvania State University, 1966
• Ph.D. Duke University, 1969

Positions

• Lord-Chandran Distinguished Professor of Engineering
• Professor of Electrical and Computer Engineering
• Affiliate of the Duke Initiative for Science & Society

Awards, Honors, and Distinctions

• Life Fellow. IEEE. 2009
• Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology. Electrochemical Society. 2003
• Third Millennium Medal. IEEE. 2000
• Professor James F. Gibbons Achievement Award. 4th International Conference on Advanced Thermal Processing. 1996
• Fellow. Electrochemical Society. 1994
• Fellow. Institute for Electrical and Electronics Engineers. 1990

Courses Taught

• EGR 393: Research Projects in Engineering
• ECE 533: Biochip Engineering
• ECE 528: Nanoscale IC Chip Technology
• ECE 493: Projects in Electrical and Computer Engineering
• ECE 331L: Fundamentals of Microelectronic Circuits

Publications

• Bigdeli Y, Preetam S, Scott KC, Zhong Z, Liang TC, Tini Z, et al. Enhanced fluorescent detection of nucleosomes using functionalized magnetic beads on a digital microfluidic device. In: Progress in Biomedical Optics and Imaging - Proceedings of SPIE. 2022.
• Bigdeli Y, Preetam S, Scott KC, Zhong Z, Liang TC, Chakrabarty K, et al. Fluorescent detection of nucleosomes using functionalized magnetic beads on a digital microfluidic device. In: Progress in Biomedical Optics and Imaging - Proceedings of SPIE. 2021.
• Preetam S, Bigdeli Y, Fair RB. ENHANCED BIOMOLECULAR BINDING TO BEADS ON A DIGITAL MICROFLUIDIC DEVICE. In: MicroTAS 2021 - 25th International Conference on Miniaturized Systems for Chemistry and Life Sciences. 2021. p. 959–60.
• Huang S, Connolly J, Khlystov A, Fair RB. Digital Microfluidics for the Detection of Selected Inorganic Ions in Aerosols. Sensors (Basel, Switzerland). 2020 Feb;20(5):E1281.
• Liang TC, Zhong Z, Bigdeli Y, Ho TY, Chakrabarty K, Fair R. Adaptive droplet routing in digital microfluidic biochips using deep reinforcement learning. In: 37th International Conference on Machine Learning, ICML 2020. 2020. p. 6006–16.
• Madison AC, Royal MW, Fair RB. Piezo-driven acoustic streaming in an electrowetting-on-dielectric digital microfluidics device. Microfluidics and Nanofluidics. 2017 Dec 1;21(12).
• Madison AC, Royal MW, Vigneault F, Chen L, Griffin PB, Horowitz M, et al. Scalable Device for Automated Microbial Electroporation in a Digital Microfluidic Platform. ACS synthetic biology. 2017 Sep;6(9):1701–9.
• Fair RB. Demonstration of Automated Analysis of Multiple Analytes on an Integrated Digital Microfluidic Platform. Clinical chemistry. 2017 May;63(5):1038–9.
• Moore JA, Nemat-Gorgani M, Madison AC, Sandahl MA, Punnamaraju S, Eckhardt AE, et al. Automated electrotransformation of Escherichia coli on a digital microfluidic platform using bioactivated magnetic beads. Biomicrofluidics. 2017 Jan;11(1):014110.
• Madison AC, Royal MW, Fair RB. Fluid transport in partially shielded electrowetting on dielectric digital microfluidic devices. Journal of Microelectromechanical Systems. 2016 Aug 1;25(4):593–605.
• Hu K, Ibrahim M, Chen L, Li Z, Chakrabarty K, Fair R. Experimental demonstration of error recovery in an integrated cyberphysical digital-microfluidic platform. In: IEEE Biomedical Circuits and Systems Conference: Engineering for Healthy Minds and Able Bodies, BioCAS 2015 - Proceedings. 2015.
• Chen L, Fair RB. Digital microfluidics chip with integrated intra-droplet magnetic bead manipulation. Microfluidics and Nanofluidics. 2015 Dec 1;19(6):1349–61.
• Chen L, Madison A, Fair RB. Intra-droplet magnetic bead manipulation integrated on a digital microfluidic chip. In: 18th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2014. 2014. p. 1449–51.
• Royal MW, Jokerst NM, Fair RB. Droplet-based sensing: Optical microresonator sensors embedded in digital electrowetting microfluidics systems. IEEE Sensors Journal. 2013 Oct 21;13(12):4733–42.
• Hu K, Hsu BN, Madison A, Chakrabarty K, Fair R. Fault detection, real-time error recovery, and experimental demonstration for digital microfluidic biochips. Proceedings -Design, Automation and Test in Europe, DATE. 2013 Jan 1;559–64.
• Sandahl M, Punnamaraju S, Madison A, Harrington J, Royal M, Fair R, et al. Software automated genomic engineering (SAGE) enabled by electrowetting-on-dielectric digital microfluidics. 17th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2013. 2013 Jan 1;2:1260–3.
• Royal MW, Jokerst NM, Fair RB. Integrated sample preparation and sensing: Polymer microresonator sensors embedded in digital electrowetting microfluidic systems. IEEE Photonics Journal. 2012 Dec 10;4(6):2126–35.
• Khlystov A, Hsu BN, Fair R. Development of digital microfluidic impactor for online determination of sulfate. Air and Waste Management Association - Air Quality Measurement Methods and Technology Conference 2012. 2012 Dec 1;105–9.
• Lin Y-Y, Welch ERF, Fair RB. Low voltage picoliter droplet manipulation utilizing electrowetting-on-dielectric platforms. Sensors and actuators B, Chemical. 2012 Oct;173:338–45.
• Luan L, Royal MW, Evans R, Fair RB, Jokerst NM. Chip scale optical microresonator sensors integrated with embedded thin film photodetectors on electrowetting digital microfluidics platforms. IEEE Sensors Journal. 2012 May 8;12(6):1794–800.
• Hsu BN, Madison AC, Fair RB. Accelerate sepsis diagnosis by seamless integration of DNA purification and QPCR. Proceedings of the 16th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2012. 2012 Jan 1;830–2.
• Royal MW, Fair RB, Jokerst NM. Integrated sample preparation and sensing: Microresonator optical sensors embedded in digital electrowetting microfluidics systems. Proceedings of IEEE Sensors. 2011 Dec 1;2050–3.
• Boles DJ, Benton JL, Siew GJ, Levy MH, Thwar PK, Sandahl MA, et al. Droplet-based pyrosequencing using digital microfluidics. Analytical chemistry. 2011 Nov;83(22):8439–47.
• Welch ERF, Lin Y-Y, Madison A, Fair RB. Picoliter DNA sequencing chemistry on an electrowetting-based digital microfluidic platform. Biotechnology journal. 2011 Feb;6(2):165–76.
• Fair RB. Parallel processing of multifunctional, point-of-care bio-applications on electrowetting chips. 14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010. 2010 Dec 1;3:2095–7.
• Lin Y-Y, Evans RD, Welch E, Hsu B-N, Madison AC, Fair RB. Low Voltage Electrowetting-on-Dielectric Platform using Multi-Layer Insulators. Sensors and actuators B, Chemical. 2010 Sep;150(1):465–70.
• Chakrabarty K, Fair RB, Zeng J. Design tools for digital microfluidic biochips: Toward functional diversification and more than Moore. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2010 Jul 1;29(7):1001–17.
• Fair RB. Scaling fundamentals and applications of digital microfluidic microsystems. NATO Science for Peace and Security Series A: Chemistry and Biology. 2010 Jan 1;285–304.
• Geisler CG, Wootton DM, Lelkes PI, Fair R, Zhou JG. Material study for electrowetting-based multi-microfluidics array printing of high resolution tissue construct with embedded cells and growth factors. Proceedings of the ASME 1st Global Congress on NanoEngineering for Medicine and Biology 2010, NEMB2010. 2010 Jan 1;191–3.
• Fair RB. Digital microfluidic chips for chemical and biological applications. Conference proceedings : . Annual International Conference of the IEEE Engineering in Medicine and Biology Society IEEE Engineering in Medicine and Biology Society Conference. 2009 Dec 1;6560–4.
• Fair RB. Digital microfluidic chips for chemical and biological applications. Annual International Conference of the IEEE Engineering in Medicine and Biology Society IEEE Engineering in Medicine and Biology Society Annual International Conference. 2009 Jan;2009:6560–4.
• Song JH, Evans R, Lin YY, Hsu BN, Fair RB. A scaling model for electrowetting-on-dielectric microfluidic actuators. Microfluidics and Nanofluidics. 2009 Jan 1;7(1):75–89.
• Luan L, Evans RD, Schwinn D, Fair RB, Jokerst NM. Chip scale integration of optical microresonator sensors with digital microfludics systems. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2008 Dec 1;259–60.
• Luan L, Evans RD, Jokerst NM, Fair RB. Integrated optical sensor in a digital microfluidic platform. IEEE Sensors Journal. 2008 May 1;8(5):628–35.
• Nagle HT, Fair RB, Shannon MA, Tan OK, Geschke O, Ahn CH, et al. Editorial introduction for the special issue on sensors for microfluidic analysis systems. IEEE Sensors Journal. 2008 May 1;8(5):427–9.
• Zhou J, Lu L, Byrapogu K, Wootton DM, Lelkes PI, Fair R. Electrowetting-based multi-microfluidics array printing of high resolution tissue construct with embedded cells and growth factors. Virtual and Physical Prototyping. 2007 Dec 1;2(4):217–23.
• Zhou J, Lu L, Byrapogu K, Wootton D, Lelkes P, Fair R. Electrowetting based multi-microfluidics array printing of high resolution tissue construct with embedded cells and growth factors. Proceedings of the 3rd International Conference on Advanced Research in Virtual and Rapid Prototyping: Virtual and Rapid Manufacturing Advanced Research Virtual and Rapid Prototyping. 2007 Dec 1;265–74.
• Evans R, Luan L, Jokerst NM, Fair RB. Optical detection heterogeneously integrated with a coplanar digital microfluidic lab-on-a-chip platform. Proceedings of IEEE Sensors. 2007 Dec 1;423–6.
• Fair RB. Digital microfluidics: Is a true lab-on-a-chip possible? Microfluidics and Nanofluidics. 2007 Jun 1;3(3):245–81.
• Fair RB, Khlystov A, Tailor TD, Ivanov V, Evans RD, Srinivasan V, et al. Chemical and biological applications of digital-microfluidic devices. IEEE Design and Test of Computers. 2007 Jan 1;24(1):10–24.
• Khlystov AY, Ma Y, Fair R. Development of digital microfluidic impactor for real-time measurements of the aerosol chemical composition. Air and Waste Management Association - Symposium on Air Quality Measurement: Methods and Technology 2006. 2006 Dec 1;191–5.
• Su F, Chakrabarty K, Fair RB. Microfluidics-based biochips: Technology issues, implementation platforms, and design automation challenges. 2006 Dec 1;1–29.
• Su F, Chakrabarty K, Fair RB. Microfluidics-based biochips: Technology issues, implementation platforms, and design-automation challenges. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2006 Feb 1;25(2):211–23.
• Pamula VK, Srinivasan V, Chakrapani H, Fair RB, Toone EJ. A droplet-based lab-on-a-chip for colorimetric detection of nitroaromatic explosives. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2005 Oct 25;722–5.
• Srinivasan V, Pamula V, Paik P, Fair R. Protein stamping for maldi mass spectrometry using AN electrowetting-based microfluidic platform. Proceedings of SPIE - The International Society for Optical Engineering. 2004 Dec 1;5591:26–32.
• Fair RB, Khlystov A, Srinivasan V, Pamula VK, Weaver KN. Integrated chemical/biochemical sample collection, pre-concentration, and analysis on a digital microfluidic lab-on-a-chip platform. Proceedings of SPIE - The International Society for Optical Engineering. 2004 Dec 1;5591:113–24.
• Srinivasan V, Pamula VK, Fair RB. An integrated digital microfluidic lab-on-a-chip for clinical diagnostics on human physiological fluids. Lab on a chip. 2004 Aug;4(4):310–5.
• Srinivasan V, Pamula VK, Fair RB. Droplet-based microfluidic lab-on-a-chip for glucose detection. Analytica Chimica Acta. 2004 Apr 1;507(1):145–50.
• Ren H, Fair RB, Pollack MG. Automated on-chip droplet dispensing with volume control by electro-wetting actuation and capacitance metering. Sensors and Actuators, B: Chemical. 2004 Mar 15;98(2–3):319–27.
• Lee A, Fair RB. Special issue on biomedical applications for MEMS and microfluidics. Proceedings of the IEEE. 2004 Jan 1;92(1):3–5.
• Zhang T, Chakrabarty K, Fair RB. Behavioral modeling and performance evaluation of microelectrofluidics- based PCR systems using systemC. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2004;23(6):843–58.
• Fair RB, Srinivasan V, Ren H, Paik P, Pamula VK, Pollack MG. Electrowetting-Based On-Chip Sample Processing for Integrated Microfluidics. Technical Digest - International Electron Devices Meeting. 2003 Dec 1;779–82.
• Paik P, Pamula VK, Fair RB. Rapid droplet mixers for digital microfluidic systems. Lab on a chip. 2003 Nov;3(4):253–9.
• Srinivasan V, Pamula V, Pollack M, Fair R. A digital microfluidic biosensor for multianalyte detection. Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). 2003 Jul 23;327–30.
• Paik P, Pamula VK, Pollack MG, Fair RB. Electrowetting-based droplet mixers for microfluidic systems. Lab on a chip. 2003 Feb;3(1):28–33.
• Ren H, Srinivasan V, Fair RB. Design and testing of an interpolating mixing architecture for electrowetting-based droplet-on-chip chemical dilution. In: TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. 2003. p. 619–22.
• Zhang T, Chakrabarty K, Fair RB. Integrated hierarchical design of microelectrofluidic systems using SystemC. 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. 2002 Dec 1;144–9.
• Zhang T, Chakrabarty K, Fair RB. System performance evaluation with systemC for two PCR microelectrofluidic systems. 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. 2002 Dec 1;48–53.
• Ren H, Fair RB, Pollack MG, Shaughnessy EJ. Dynamics of electro-wetting droplet transport. Sensors and Actuators, B: Chemical. 2002 Nov 15;87(1):201–6.
• Pollack MG, Shenderov AD, Fair RB. Electrowetting-based actuation of droplets for integrated microfluidics. Lab on a chip. 2002 May;2(2):96–101.
• Zhang T, Chakrabarty K, Fair RB. Design of reconfigurable composite microsystems based on hardware/software codesign principles. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2002;21(8):987–95.
• Zhang T, Chakrabarty K, Fair RB. Integrated hierarchical design of microelectrofluidic systems using SystemC. Microelectronics Journal. 2002;33(5–6):459–70.
• Ren H, Fair RB. Micro/nano liter droplet formation and dispensing by capacitance metering and electrowetting actuation. In: Proceedings of the IEEE Conference on Nanotechnology. 2002. p. 369–72.
• Zhang T, Chakrabarty K, Fair RB. Microelectrofluidic systems: Modeling and simulation. 2002.
• Pamula VK, Paik PY, Venkatraman J, Pollack MG, Fair RB. Microfluidic electrowetting-based droplet mixing. In: 2001 Microelectromechanical Systems Conference, MEMS 2001. 2002. p. 8–10.
• Zhang T, Chakrabarty K, Fair RB. Design of reconfigurable composite microsystems based on hardware/software co-design principles ¹. 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. 2001 Dec 1;148–52.
• Ren H, Jog A, Fair RB. Statistical optimal design of microelectromechanical system (MEMS). 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. 2001 Dec 1;169–72.
• Ding J, Chakrabarty K, Fair RB. Reconfigurable microfluidic system architecture based on two-dimensional electrowetting arrays. 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. 2001 Dec 1;181–5.
• Fair RB, Pollack MG, Woo R, Pamula VK, Hong R, Zhang T, et al. A micro-watt metal-insulator-solution-transport (MIST) device for scalable digital bio-microfluidic systems. Technical Digest - International Electron Devices Meeting. 2001 Dec 1;367–70.
• Ding J, Chakrabarty K, Fair RB. Scheduling of microfluidic operations for reconfigurable two-dimensional electrowetting arrays. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2001 Dec 1;20(12):1463–8.
• Pamula VK, Jog A, Fair RB. Mechanical property measurement of thin-film gold using thermally actuated bimetallic cantilever beams. 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. 2001 Dec 1;410–3.
• Jopling J, Rose D, Fair R. The coupled-domain system simulation/simulatability problem. 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. 2001 Dec 1;116–9.
• Srinivasan V, Jog A, Fair RB. Scalable macromodels for microelectromechanical systems. 2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001. 2001 Dec 1;72–5.
• Zhang TH, Cao F, Dewey AM, Fair RB, Chakrabarty K. Performance analysis of microelectrofluidic systems using hierarchical modeling and simulation (vol 48, pg 482, 2001). IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING. 2001 Jul 1;48(7):749–749.
• Zhang T, Cao F, Dewey AM, Fair RB, Chakrabarty K. Performance analysis of microelectrofluidic systems using hierarchical modeling and simulation. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing. 2001;48(5):482–91.
• Zhang T, Cao F, Dewey AM, Fair RB, Chakrabarty K. Corrections to “Performance Analysis of Microelectrofluidic Systems Using Hierarchical Modeling and Simulation”. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing. 2001 Jan 1;48(7):749.
• Dewey A, Fair R, Jopling J, Ding J, Zhang T, Cao F, et al. Towards microelectrofluidic system (MEFS) computing and architecture. 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000. 2000 Dec 1;142–5.
• Pollack MG, Fair RB, Shenderov AD. Electrowetting-based actuation of liquid droplets for microfluidic applications. Applied Physics Letters. 2000 Sep 11;77(11):1725–6.
• Pamula VK, Fair RB. Detection of dissolved TNT and DNT in soil with a MEMS explosive particle detector. Proceedings of SPIE - The International Society for Optical Engineering. 2000;4038:I/-.
• Pamula VK, Fair RB. Detection of dissolved TNT and DNT in soil with a MEMS explosive particle detector. Proceedings of SPIE - The International Society for Optical Engineering. 2000 Jan 1;4038.
• Fair RB. A historical view of the role of ion-implantation defects in PN junction formation for devices. Materials Research Society Symposium - Proceedings. 2000 Jan 1;610.
• Zhang T, Dewey A, Fair R. A hierarchical approach to stochastic discrete and continuous performance simulation using composable software components. Microelectronics Journal. 2000 Jan 1;31(2):95–104.
• Fair RB. Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing. IEEE Electron Device Letters. 1999 Sep 1;20(9):466–9.
• Vasudevan N, Massoud HZ, Fair RB. Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses. Journal of the Electrochemical Society. 1999 Apr 1;146(4):1536–9.
• Wu Y, Niimi H, Yang H, Lucovsky G, Fair RB. Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces. J Vac Sci Technol B, Microelectron Nanometer Struct (USA). 1999;17(4):1813–22.
• Pamula VK, Fair RB. Detection of nanogram explosive particles with a MEMS sensor. Proceedings of SPIE - The International Society for Optical Engineering. 1999 Jan 1;3710(I):321–7.
• Fair RB, Pollack M, Pamula VK. MEMS devices for detecting the presence of explosive material residues in mine fields. Proceedings of SPIE - The International Society for Optical Engineering. 1998 Dec 1;3392:409–17.
• Vasudevan N, Fair RB, Massoud HZ, Zhao T, Look K, Karpovich Y, et al. ON-state reliability of amorphous-silicon antifuses. Journal of Applied Physics. 1998 Dec 1;84(11):6440–7.
• Vasudevan N, Fair RB, Massoud HZ. Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses. Journal of Applied Physics. 1998 Nov 1;84(9):4979–83.
• Fair RB, Li S. Photonic effects in the deactivation of ion implanted arsenic. Journal of Applied Physics. 1998 Apr 15;83(8):4081–90.
• Tsuei TW, Wood RL, Khan Malek C, Donnelly MM, Fair RB. Tapered microvalves fabricated by off-axis X-ray exposures. Microsystem Technologies. 1998 Jan 1;4(4):201–4.
• Fair RB. History of some early developments in ion-implantation technology leading to silicon transistor manufacturing. Proceedings of the IEEE. 1998 Jan 1;86(1):111–37.
• Fair RB, Pamula V, Pollack M. MEMS-based explosive particle detection and remote particle stimulation. Proceedings of SPIE - The International Society for Optical Engineering. 1997 Dec 1;3079:671–9.
• Chen G, Borca-Tasciuc T, Fair RB. Photon effect on radiative properties of silicon during rapid thermal processing. Journal of Applied Physics. 1997 Jul 15;82(2):830–5.
• Fair RB. Modeling boron diffusion in ultrathin nitrided oxide p ⁺ Si gate technology. IEEE Electron Device Letters. 1997 Jun 1;18(6):244–7.
• Fair RB. Boron penetration of thin polysilicon gates ultrathin gate dielectrics from B+ implantation and thermal processing. In: Massoud HZ, Iwai H, Claeys C, Fair RB, editors. ULSI SCIENCE AND TECHNOLOGY / 1997. ELECTROCHEMICAL SOCIETY INC; 1997. p. 247–61.
• Fair RB. Physical models of boron diffusion in ultrathin gate oxides. Journal of the Electrochemical Society. 1997 Jan 1;144(2):708–17.
• Fair RB, Shen M. Ultra-shallow 2D dopant profile simulation versus experimental measurement in the low thermal budget regime. Measurement, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors. 1997;
• Bobbio SM, Smith SW, Goodwin Johansson S, Fair RB, DuBois TD, Tranjan FM, et al. Integrated force array: interface to external systems. Proc SPIE - Int Soc Opt Eng (USA). 1997;3046:248–59.
• Fair RB, Calder J. Focus on the Future. Proceedings of the IEEE. 1997 Jan 1;85(11):1673–4.
• Fair RB, Gafiteanu RA. Modeling boron diffusion in thin-oxide p⁺ Si gate technology. IEEE Electron Device Letters. 1996 Nov 1;17(11):497–9.
• Fair RB. Oxide thickness effect on boron diffusion in thin oxide p⁺ Si gate technology. IEEE Electron Device Letters. 1996 May 1;17(5):242–3.
• Fair RB, Richards W. Process simulation of dopant atom diffusion in SiO2. In: Srinivasan GR, Murthy CS, Dunham ST, editors. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY. ELECTROCHEMICAL SOCIETY INC; 1996. p. 179–94.
• Fair RB. Rapid thermal annealing issues in silicon processing. In: Ravindra NM, Singh RK, editors. TRANSIENT THERMAL PROCESSING TECHNIQUES IN ELECTRONIC MATERIALS. MINERALS, METALS & MATERIALS SOC; 1996. p. 61–6.
• Bobbio SM, Goodwin-Johansson S, DuBois TD, Tranjan FM, Smith SW, Fair RB, et al. Integrated force array: positioning drive applications. Proceedings of SPIE - The International Society for Optical Engineering. 1996 Jan 1;2722:123–34.
• Fair RB. Boron diffusion in ultrathin silicon dioxide layers. In: Massoud HZ, Poindexter EH, Helms CR, editors. PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996. ELECTROCHEMICAL SOCIETY INC; 1996. p. 200–13.
• Fair RB. Unified model of boron diffusion in thin gate oxides: effects of F, H2, N, oxide thickness and injected Si interstitials. Technical Digest - International Electron Devices Meeting. 1995 Dec 1;85–8.
• Mirabedini RR, Goodwin-Johansson SH, Massoud HZ, Fair RB. Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers. Electronics Letters. 1994 Jan 1;30(19):1631–2.
• Fair RB, Turlik I. Proof-concept collaboration model for advanced packaging research at MCNC. Proceedings of SPIE - The International Society for Optical Engineering. 1993 Dec 1;1986:552–5.
• Neuman MR, Fair RB, Mehragany M, Massoud HZ. Microelectromechanical systems: a new technology for biomedical applications. Proceedings of the Annual Conference on Engineering in Medicine and Biology. 1993 Dec 1;15(pt 3):1545–6.
• Fair RB. Junction formation in silicon by rapid thermal annealing. Materials Research Society Symposium Proceedings. 1993 Jan 1;300:545–58.
• Fair RBE, Preston LE. Engineering Research Centers: goals and results. Proc IEEE (USA). 1993;81(1):3–9.
• Fair RB. Junction formation in silicon by rapid thermal annealing. Materials Research Society Symposium Proceedings. 1993 Jan 1;303:311–24.
• Fair RB, Freedman JF. Technology transfer utilizing the proof-of-concept facility. IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop. 1992 Jan 1;66–8.
• Kim Y, Massoud HZ, Goesele UM, Fair RB. Physical modeling of the time constant of transient enhancement in the diffusion of ion-implanted dopants in silicon. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):254–72.
• Kim Y, Tan TY, Massoud HZ, Fair RB. Modeling the enhanced diffusion of implanted boron in silicon. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):304–20.
• Fair RB, Gardner CL, Rose DJ, Johnson MJ, Kenkel SW, Rose JE, et al. TwoDimensional Process Simulation Using Verified Phenomenological Models. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 1991 Jan 1;10(5):643–51.
• Fair RB. Challenges and priorities for two dimensional process simulation. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):689–702.
• Fair RB. Process model for simulating the effect of amorphizing implants on phosphorus diffusion. Proceedings - The Electrochemical Society. 1990 Dec 1;90(7):429–36.
• Ward RR, Massoud HZ, Fair RB. Thermal oxidation of heavily doped silicon in the thin-film regime. Dopant behavior and modeling growth kinetics. Proceedings - The Electrochemical Society. 1990 Dec 1;90(7):405–16.
• Kim Y, Massoud HZ, Chevacharoeukul S, Fair RB. Role of end-of-range dislocation loops as a diffusion barrier. Proceedings - The Electrochemical Society. 1990 Dec 1;90(7):437–46.
• FAIR RB. TRANSIENT DIFFUSION IN SILICON - MODELS AND CURES. In: JOURNAL OF ELECTRONIC MATERIALS. MINERALS METALS MATERIALS SOC; 1990. p. 34–34.
• Fair RB, Ruggles GA. Thermal budget issues for deep submicron ULSI. Solid State Technology. 1990 May 1;33(5):107–13.
• Kim Y, Massoud HZ, Fair RB. The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing. Journal of the Electrochemical Society. 1990 Jan 1;137(8):2599–603.
• Fair RB. Damage Removal/Dopant Diffusion Tradeoffs in Ultra-Shallow Implanted p+-n Junctions. IEEE Transactions on Electron Devices. 1990 Jan 1;37(10):2237–42.
• Fair RB. Point Defect Charge-State Effects on Transient Diffusion of Dopants in Si. Journal of the Electrochemical Society. 1990 Jan 1;137(2):667–71.
• Tsai JCC, Schimmel DG, Ahrens RE, Fair RB. Point defect generation during phosphorus diffusion in silicon. II. Concentrations below solid solubility, ion-implanted phosphorus. J Electrochem Soc (USA). 1990;134(9):2348–56.
• Subrahmanyan R, Massoud HZ, Fair RB. Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon. Journal of the Electrochemical Society. 1990 Jan 1;137(5):1573–9.
• Fair RB. Challenges to Manufacturing Submicron, Ultra-Large Scale Integrated Circuits. Proceedings of the IEEE. 1990 Jan 1;78(11):1687–705.
• Rogers WB, Massoud HZ, Fair RB, Gösele UM, Tan TY, Rozgonyi GA. The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon. Journal of Applied Physics. 1989 Dec 1;65(11):4215–9.
• Fair RB. Diffusion and oxidation of silicon. Advances in Chemistry Series. 1989 Dec 1;(221):265–323.
• Fair RB. Shallow junctions--Modeling the dominance of point defect charge states during transient diffusion. Technical Digest - International Electron Devices Meeting. 1989 Dec 1;691–4.
• Kim Y, Massoud HZ, Fair RB. The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation. Journal of Electronic Materials. 1989 Mar 1;18(2):143–50.
• Fair RB. The role of transient damage annealing in shallow junction formation. Nuclear Inst and Methods in Physics Research, B. 1989 Feb 2;37–38(C):371–8.
• Subrahmanyan R, Massoud HZ, Fair RB. Accurate junction-depth measurements using chemical staining. ASTM Special Technical Publication. 1989;(990):126.
• Fair RB, Subrahmanyan R. Phenomenological versus point-defect-based process modeling. Where should you put your money? Proceedings - The Electrochemical Society. 1989;89(9):133.
• Fair RB. The role of transient damage annealing in shallow junction formation. Nuclear Inst and Methods in Physics Research, B. 1989;37–38(C):371–8.
• Ajmera AC, Rozgonyi GA, Fair RB. Point defect/dopant diffusion considerations following preamorphization of silicon via Si⁺ and Ge⁺ implantation. Applied Physics Letters. 1988 Dec 1;52(10):813–5.
• Ozturk MC, Wortman JJ, Fair RB. Very shallow p⁺-n junction formation by low-energy BF 2⁺ ion implantation into crystalline and germanium preamorphized silicon. Applied Physics Letters. 1988 Dec 1;52(12):963–5.
• KIM Y, FAIR RB, MASSOUD HZ. ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION. JOURNAL OF ELECTRONIC MATERIALS. 1988 Jul 1;17(4):S26–S26.
• Kim Y, Massoud HZ, Fair RB. Boron profile changes during low-temperature annealing of BF ⁺2-implanted silicon. Applied Physics Letters. 1988 Jan 1;53(22):2197–9.
• Fair RB. Low-Thermal-Budget Process Modeling with the PREDICT™ Computer Program. IEEE Transactions on Electron Devices. 1988 Jan 1;35(3):285–93.
• Subrahmanyan R, Massoud HZ, Fair RB. Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining. Applied Physics Letters. 1988 Jan 1;52(25):2145–7.
• Fair RB, Rose JE. PROCESS SIMULATION OF SUBMICRON TECHNOLOGIES. Semiconductor International. 1987 Dec 1;10(13):72–5.
• Subrahmanyan R, Massoud HZ, Fair RB. The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon. Journal of Applied Physics. 1987 Dec 1;61(10):4804–7.
• Fair RB, Rose JE. DEEP DECISION TREE APPROACH TO MODELING SUBMICRON SILICON TECHNOLOGIES. 1987 Dec 1;248–51.
• SUBRAHMANYAN R, MASSOUD HZ, FAIR RB. MEASUREMENT OF TWO-DIMENSIONAL DIFFUSION PROFILES. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1987 Aug 1;134(8B):C451–C451.
• SUBRAHMANYAN R, MASSOUD HZ, FAIR RB. CHARACTERIZATION AND MODELING OF THE DIFFUSION OF BORON AND ARSENIC IN SI IN DRY O2/HCL MIXTURES. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1987 Mar 1;134(3):C124–5.
• ROGERS B, MASSOUD HZ, FAIR RB, GOSELE UM, SHAW R, KORB H, et al. POINT-DEFECT KINETICS DURING BACK SIDE OXIDATION MEASURED BY FRONT SIDE STACKING-FAULT GROWTH. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1987 Mar 1;134(3):C125–C125.
• Tsai JCC, Schimmel DG, Fair RB, Maszara W. Point Defect Generation during Phosphorus Diffusion in Silicon I. Concentrations above Solid Solubility. Journal of the Electrochemical Society. 1987 Jan 1;134(6):1508–18.
• Morehead FF, Fair RB. Comment on `The diffusion of antimony in heavily doped and (sic) n- and p-type silicon' [J. Mater. Res. 1, 705 (1986)]. J Mater Res (USA). 1987;2(4):538–41.
• Fair RB. Reply to comments of F. F. Morehead. Journal of Materials Research. 1987 Jan 1;2(4):539–41.
• Fair RB. PROCESS MODELS FOR ULTRA-SHALLOW JUNCTION TECHNOLOGIES. Technical Digest - International Electron Devices Meeting. 1987 Jan 1;260–3.
• Fair RB. Modeling of dopant diffusion during rapid thermal annealing. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1986 Jan 1;4(3):926–32.
• Fair RB. IMPURITY DIFFUSION DURING RTA. Materials Research Society Symposia Proceedings. 1985 Dec 1;35:381–92.
• Manda ML, Shepard ML, Fair RB, Massoud HZ. STRESS-ASSISTED DIFFUSION OF BORON AND ARSENIC IN SILICON. Materials Research Society Symposia Proceedings. 1985 Dec 1;36:71–6.
• Fair RB, Subrahmanyan R. Predict - A new design tool for shallow junction processes. Proceedings of SPIE - The International Society for Optical Engineering. 1985 Apr 9;530:88–96.
• Liu J, Wortman JJ, Fair RB. IIB-6 Shallow p⁺-n Junction for CMOS VLSI Application Using Germanium Preamorphization. IEEE Transactions on Electron Devices. 1985 Jan 1;32(11):2533.
• Wilson WB, Massoud HZ, Swanson EJ, Jr RTG, Fair RB. MEASUREMENT AND MODELING OF CHARGE FEEDTHROUGH IN N-CHANNEL MOS ANALOG SWITCHES. IEEE Journal of Solid-State Circuits. 1985;SC-20(6):1206–13.
• Fair RB, Cook RC, Wortman JJ. CURVE FITTING MODELS FOR BORON, PHOSPHORUS AND ARSENIC ION IMPLANTATIONS IN CRYSTALLINE SILICON. Electrochemical Society Extended Abstracts. 1985 Jan 1;85–1:371–2.
• Fair RB. OBSERVATIONS OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION EXPERIMENTS IN SILICON. 1985 Jan 1;173–85.
• Wilson WB, Massoud HZ, Swanson EJ, George RT, Fair RB. Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches. IEEE Journal of Solid-State Circuits. 1985 Jan 1;20(6):1206–13.
• Rogers B, Fair RB, Dyson W, Rozgony GA. COMPUTER SIMULATION OF OXYGEN PRECIPITATION AND DENUDED ZONE FORMATION. Electrochemical Society Extended Abstracts. 1984 Dec 1;84–1:54-54A.
• Rogers B, Fair RB, Dyson W, Rozgonyi GA. COMPUTER SIMULATION OF OXYGEN PRECIPITATION AND DENUDED ZONE FORMATION. Proceedings - The Electrochemical Society. 1984 Dec 1;84–7:74–84.
• ROGERS B, FAIR RB, DYSON W, ROZGONYI GA. COMPUTER-SIMULATION OF OXYGEN PRECIPITATION AND DENUDED ZONE FORMATION IN CZOCHRALSKI SILICON. In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. ELECTROCHEMICAL SOC INC; 1984. p. C83–C83.
• Fair RB. The role of vacancies and self-interstitials in impurity diffusion in silicon. Diffus Defect Data (Switzerland). 1984;37:1–24.
• Fair RB. The role of vacancies and self-interstitials in impurity diffusion in silicon. In: Materials Science Forum. 1984. p. 109–31.
• Fair RB, Wortman JJ, Masnari NA, Mike Tischler JL. Modeling Physical Limitations on Junction Scaling for CMOS. IEEE Transactions on Electron Devices. 1984 Jan 1;31(9):1180–5.
• Fair RB, Wortman JJ, Liu J, Tischler M, Masnari NA. MODELING PHYSICAL LIMITATIONS ON JUNCTION SCALING FOR CMOS. IEEE Transactions on Electron Devices. 1984;ED-31(9):1180–5.
• Fair RB, Wortman JJ, Liu J. Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon. Journal of the Electrochemical Society. 1984 Jan 1;131(10):2387–94.
• Fair RB, Meyer WG. MODELING ANOMALOUS JUNCTION FORMATION IN SILICON BY THE CODIFFUSION OF IMPLANTED ARSENIC WITH PHOSPHORUS. ASTM Special Technical Publication. 1983 Dec 1;290–305.
• Fair RB. The effects of impurity diffusion and surface damage on oxygen precipitation in silicon. Journal of Applied Physics. 1983 Dec 1;54(1):388–91.
• Fair RB. MCNC - A NEW MULTI-INSTITUTIONAL THRUST IN MANUFACTURING TECHNOLOGY RESEARCH. 1983 Dec 1;10–2.
• Fair RB, Wortman JJ, Liu J. MODELING RAPID THERMAL ANNEALING PROCESSES FOR SHALLOW JUNCTION FORMATION IN SILICON. Technical Digest - International Electron Devices Meeting. 1983 Jan 1;658–61.
• Fair RB, Wortman JJ, Liu J, Tischler M, Masnari NA, Duh KY. IIIB-8 Modeling Physical Limitations on Junction Scaling for CMOS. IEEE Transactions on Electron Devices. 1983 Jan 1;30(11):1584–5.
• FAIR RB. MCNC - ORGANIZING RESEARCH ON THE STATE LEVEL. IEEE SPECTRUM. 1983 Jan 1;20(11):58-+.
• Fair RB. MODELING OF DOPANT DIFFUSION AND ASSOCIATED EFFECTS IN SILICON. Materials Research Society Symposia Proceedings. 1983 Jan 1;14:61–74.
• Bell TE, Moto oka T, Fischetti MA, Cooper RS, Kahn RE, Bloch E, et al. The teams and the players [fifth-generation computers]. IEEE Spectr (USA). 1983;20(11):45–72.
• Meyer WG, Fair RB. DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFET's. IEEE Transactions on Electron Devices. 1983;ED-30(2):96–103.
• Meyer WG, Fair RB. Dynamic Behavior of the Buildup of Fixed Charge and Interface States During Hot-Carrier Injection in Encapsulated MOSFET's. IEEE Transactions on Electron Devices. 1983 Jan 1;30(2):96–103.
• Fair RB, Carim A. On the Doping Dependence of Oxidation-Induced Stacking Fault Shrinkage in Silicon. Journal of the Electrochemical Society. 1982 Jan 1;129(10):2319–21.
• Fair RB. SILICON PROCESS BALANCING ACT FOR VLSI. Solid State Technology. 1982 Jan 1;25(4):220–6.
• FAIR RB, CARIM A. ON THE DOPING DEPENDENCE OF OXIDATION-INDUCED STACKING FAULT SHRINKAGE IN SILICON. J ELECTROCHEM SOC. 1982;V 129(N 10):2319–21.
• Fair RB. MODELING ANOMALOUS PHENOMENA IN ARSENIC DIFFUSION IN SILICON. Proceedings - The Electrochemical Society. 1981 Dec 1;81–5:963–78.
• Fair RB. Molecular transport and diffusion in solids. Sensors and Actuators. 1981;1(C):305–28.
• Fair RB. Molecular transport and diffusion in solids. Sens Actuators (Switzerland). 1981;1(3):305–28.
• Fair RB. Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An Overview. Journal of the Electrochemical Society. 1981 Jan 1;128(6):1360–8.
• Fair RB, Sun RC. THRESHOLD-VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT-HOLE EMISSION. IEEE Transactions on Electron Devices. 1981;ED-28(1):83–94.
• Fair RB, Sun RC. Threshold-Voltage Instability in MOSFET's Due to Channel Hot-Hole Emission. IEEE Transactions on Electron Devices. 1981 Jan 1;28(1):83–94.
• Fair RB. On the role of self-interstitials in impurity diffusion in silicon. Journal of Applied Physics. 1980 Dec 1;51(11):5828–32.
• Fair RB, Sun RC. THRESHOLD VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT HOLE EMISSION. Technical Digest - International Electron Devices Meeting. 1980 Jan 1;746–9.
• Fair RB. EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON E-CENTRE CONCENTRATIONS IN Si. Institute of Physics Conference Series. 1979 Dec 1;(46).
• Fair RB. The effect of strain-induced band-gap narrowing on high concentration phosphorus diffusion in silicon. Journal of Applied Physics. 1979 Dec 1;50(2):860–8.
• Fair RB. Modeling laser-induced diffusion of implanted arsenic in silicon. Journal of Applied Physics. 1979 Dec 1;50(10):6552–5.
• Fair RB. EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON E-CENTRE CONCENTRATIONS IN Si. In: Institute of Physics Conference Series. 1979.
• Fair RB, Tsai JCC. Theory and direct measurement of boron segregation in SiO2 during dry, near dry, and wet O2 oxidation. J Electrochem Soc (USA). 1978;25(12):2050–8.
• Fair RB. Analysis of Phosphorus-Diffused Layers in Silicon. Journal of the Electrochemical Society. 1978 Jan 1;125(2):323–7.
• Fair RB, Tsai JCC. Theory and Direct Measurement of Boron Segregation in SiO2 during Dry, Near Dry, and Wet O2 Oxidation. Journal of the Electrochemical Society. 1978 Jan 1;125(12):2050–8.
• Fair RB. Quantified Conditions for Emitter-Misfit Dislocation Formation in Silicon. Journal of the Electrochemical Society. 1978 Jan 1;125(6):923–6.
• Fair RB, Tsai JCC. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect. Journal of the Electrochemical Society. 1978 Jan 1;125(6):995–7.
• Fair RB, Tsai JCC. Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter. Journal of the Electrochemical Society. 1978 Jan 1;125(6):997–8.
• Fair RB, Tsai JCC. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect. Journal of the Electrochemical Society. 1977 Jan 1;124(7):1107–18.
• Fair RB, Tsai JCC. Profile parameters of implanted-diffused arsenic layers in silicon. J Electrochem Soc (USA). 1976;123(4):583–6.
• Fair RB, Wivell HW. ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED LOW-VOLTAGE Si n-p JUNCTIONS. IEEE Transactions on Electron Devices. 1976;ED-23(5):512–8.
• Fair RB. Transistor design considerations for low-noise preamplifiers. IEEE Trans Nucl Sci (USA). 1976;ns-23(1):218–25.
• Fair RB. Transistor design considerations for low-noise preamplifiers. IEEE Transactions on Nuclear Science. 1976 Jan 1;23(1):217–25.
• Fair RB, Wivell HW. Zener and Avalanche Breakdown in As-Implanted Low-Voltage Si n-p Junctions. IEEE Transactions on Electron Devices. 1976 Jan 1;23(5):512–8.
• Fair RB, Wivell HW. ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED, LOW-VOLTAGE Si N-P JUNCTIONS. 1975 Jan 1;455–8.
• Fair RB, Pappas PN. The gettering of boron by an ion-implanted antimony layer in silicon. Solid State Electronics. 1975 Jan 1;18(12):1131–4.
• Fair RB. Boron Diffusion in Silicon-Concentration and Orientation Dependence, Background Effects, and Profile Estimation. Journal of the Electrochemical Society. 1975 Jan 1;122(6):800–5.
• Fair RB, Tsai JCC. The Diffusion of Ion-Implanted Arsenic in Silicon. Journal of the Electrochemical Society. 1975 Jan 1;122(12):1689–96.
• Fair RB, Pappas PN. Diffusion of Ion-Implanted B in High Concentration P- and As-Doped Silicon. Journal of the Electrochemical Society. 1975 Jan 1;122(9):1241–4.
• Fair RB. Graphical Design and Iterative Analysis of the DC Parameters of GaAs FET's. IEEE Transactions on Electron Devices. 1974 Jan 1;21(6):357–62.
• Fair RB. Cooperative effects between arsenic and boron in silicon during simultaneous diffusions from ion implanted and chemical source predepositions. Solid State Electronics. 1974 Jan 1;17(1):17–24.
• Correction of calculated vacancy diffusion length at 1000°C in silicon. Journal of Applied Physics. 1973 Dec 1;44(8):3794–5.
• Fair RB. Quantitative theory of retarded base diffusion in silicon n-p-n structures with arsenic emitters. Journal of Applied Physics. 1973 Dec 1;44(1):283–91.
• Fair RB. Erratum: Profile estimation of high-concentration arsenic diffusion in silicon (Journal of Applied Physics (1972) 43, (1278)). Journal of Applied Physics. 1973 Dec 1;44(1):536.
• Fair RB, Weber GR. Effect of complex formation on diffusion of arsenic in silicon. Journal of Applied Physics. 1973 Dec 1;44(1):273–9.
• Fair RB. Explanation of anomalous base regions in transistors. Applied Physics Letters. 1973 Dec 1;22(4):186–7.
• Fair RB, Weber GR. Relationship between resistivity and total arsenic concentration in heavily doped n - And p -type silicon. Journal of Applied Physics. 1973 Dec 1;44(1):280–2.
• Fair RB. OPtimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters. IEEE Transactions on Electron Devices. 1973 Jan 1;20(7):642–7.
• Fair RB. OPTIMUM LOW-LEVEL INJECTION EFFICIENCY OF SILICON TRANSISTORS WITH SHALLOW ARSENIC EMITTERS. IEEE Transactions on Electron Devices. 1973;ED-20(7):642–7.
• Fair RB. Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters. IEEE Trans Electron Devices (USA). 1973;ED20(7):642–7.
• Fair RB. Correction to “Optimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters”. IEEE Transactions on Electron Devices. 1973 Jan 1;20(12):1169.
• Fair RB. Profile estimation of high-concentration arsenic diffusions in silicon. Journal of Applied Physics. 1972 Dec 1;43(3):1278–80.
• Fair RB. Harmonic Distortion in the Junction Fieldeffect Transistor with Field-Dependent Mobility. IEEE Transactions on Electron Devices. 1972 Jan 1;19(1):9–13.
• Fair RB. HIGH CONCENTRATION ARSENIC DIFFUSION IN SILICON FROM A DOPED OXIDE SOURCE. Journal of the Electrochemical Society. 1972 Jan 1;119(10):1389–94.
• Fair RB. Harmonic distortion in the junction field-effect transistor with field-dependent mobility. IEEE Trans Electron Devices (USA). 1972;ED-19(1):9–13.
• Fair RB. A wide slit scanning method for measuring electron and ion beam profiles. Journal of Physics E: Scientific Instruments. 1971 Dec 1;4(1):35–6.
• Fair RB. Analysis and design of ion-beam deposition apparatus. Journal of Applied Physics. 1971 Dec 1;42(8):3176–81.
• Fair RB. A self-consistent method for estimating non-step junction doping profiles from capacitance-voltage measurements. J Electrochem Soc (USA). 1971;118(6):971–5.
• El-Kareh A, Fair R, Marsh C. Electron-beams with a dual purpose. Vacuum. 1966 Jan 1;16(6):315.
• Fair RB, Manda ML, Wortman JJ. The diffusion of antimony in heavily doped and n- and p-type silicon. J Mater Res (USA). 1(5):705–11.

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