April S. Brown

Bio

Dr. April Brown received her B.S.E.E. from North Carolina State University in 1981, her M.S.E.E. and Ph.D. from Cornell University in 1984 and 1985, respectively. She worked at the Hughes Research Laboratories (now HRL LLC) in Malibu, Ca. from 1986-1993, and spent one year at the Army Research Office in the Physics Division (1988). She joined the Georgia Institute of Technology in 1994 as an Associate Professor and was promoted to Professor in 1999. She was Associate Dean in the College of Engineering from 1999-2001 and Executive Assistant to the President from 2001-2002. In addition, she was named Pettit Professor in Microelectronics in 2001. She joined Duke University as Professor and Chair in July 2002.

Education

• Ph.D. Cornell University, 1985

Positions

• Professor of Electrical and Computer Engineering

Awards, Honors, and Distinctions

• Fellow. American Physical Society. 2011
• Fellows. Institute for Electrical and Electronics Engineers. 1998
• Paul Rappaport Award. IEEE Electron Devices Society. 1992

Courses Taught

• ECE 590: Advanced Topics in Electrical and Computer Engineering
• ECE 495: Special Topics in Electrical and Computer Engineering
• ECE 230L: Introduction to Microelectronic Devices and Circuits
• ECE 230L9: Introduction to Microelectronic Devices and Circuits-Lab

Publications

• Losurdo M, Gutiérrez Y, Suvorova A, Giangregorio MM, Rubanov S, Brown AS, et al. Gallium Plasmonic Nanoantennas Unveiling Multiple Kinetics of Hydrogen Sensing, Storage, and Spillover. Advanced materials (Deerfield Beach, Fla). 2021 Jul;33(29):e2100500.
• Gutiérrez Y, García-Fernández P, Junquera J, Brown AS, Moreno F, Losurdo M. Polymorphic gallium for active resonance tuning in photonic nanostructures: From bulk gallium to two-dimensional (2D) gallenene. Nanophotonics. 2020 Oct 1;9(14):4233–52.
• Gutiérrez Y, Brown AS, Moreno F, Losurdo M. Plasmonics beyond noble metals: Exploiting phase and compositional changes for manipulating plasmonic performance. Journal of Applied Physics. 2020 Aug 28;128(8).
• Gutiérrez Y, Giangregorio MM, Palumbo F, González F, Brown AS, Moreno F, et al. Sustainable and Tunable Mg/MgO Plasmon-Catalytic Platform for the Grand Challenge of SF₆ Environmental Remediation. Nano letters. 2020 May;20(5):3352–60.
• Gutiérrez Y, Giangregorio MM, Brown AS, Moreno F, Losurdo M. Understanding electromagnetic interactions and electron transfer in Ga nanoparticle-graphene-metal substrate sandwich systems. Applied Sciences (Switzerland). 2019 Oct 1;9(19).
• Gutiérrez Y, Losurdo M, García-Fernández P, Sainz de la Maza M, González F, Brown AS, et al. Gallium Polymorphs: Phase-Dependent Plasmonics. Advanced Optical Materials. 2019 Jul 4;7(13).
• Gutierrez Y, Giangregorio MM, Palumbo F, Brown AS, Moreno F, Losurdo M. Optically addressing interaction of Mg/MgO plasmonic systems with hydrogen. Optics express. 2019 Feb;27(4):A197–205.
• Gutiérrez Y, Losurdo M, García-Fernández P, De La Maza MS, González F, Brown AS, et al. Dielectric function and plasmonic behavior of Ga(II) and Ga(III). Optical Materials Express. 2019 Jan 1;9(10):4050–60.
• Aprile E, Aalbers J, Agostini F, Alfonsi M, Amaro FD, Anthony M, et al. Signal yields of keV electronic recoils and their discrimination from nuclear recoils in liquid xenon. Physical Review D. 2018 May 1;97(9).
• Collar KN, Li J, Jiao W, Kong W, Brown AS. Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates. Nanotechnology. 2018 Jan;29(3):035604.
• Losurdo M, Gutierrez Y, Giangregorio MM, Humlicek J, Moreno F, Brown A. Multiphase gallium-based nanoparticles for a versatile plasmonic platform. In: Optics InfoBase Conference Papers. 2018.
• Collar K, Li J, Jiao W, Guan Y, Losurdo M, Humlicek J, et al. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy. AIP Advances. 2017 Jul 1;7(7).
• Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, et al. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy. AIP Advances. 2017 Mar 1;7(3).
• Losurdo M, Suvorova A, Rubanov S, Hingerl K, Brown AS. Thermally stable coexistence of liquid and solid phases in gallium nanoparticles. Nature materials. 2016 Sep;15(9):995–1002.
• Jiao W, Kong W, Li J, Collar K, Kim TH, Losurdo M, et al. The characteristics of MBE-grown InxAl1-xN/GaN surface states. Applied Physics Letters. 2016 Aug 22;109(8).
• Li J, Collar K, Jiao W, Kong W, Kuech TF, Babcock SE, et al. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix. Applied Physics Letters. 2016 Jun 6;108(23).
• Jiao W, Kong W, Li J, Collar K, Kim TH, Losurdo M, et al. Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying in composition. AIP Advances. 2016 Mar 1;6(3).
• Wood AW, Collar K, Li J, Brown AS, Babcock SE. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films. Nanotechnology. 2016 Mar;27(11):115704.
• Kong W, Jiao WY, Li JC, Collar K, Leach JH, Fournelle, et al. Structural Characterization of the Nanocolumnar Microstructure of InAlN (Accepted). Journal of Electronic Materials. 2015 Nov 6;
• Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, et al. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2015 Sep 28;107(13).
• Giangregorio MM, Jiao W, Bianco GV, Capezzuto P, Brown AS, Bruno G, et al. Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids. Nanoscale. 2015 Aug;7(30):12868–77.
• Brown AS, Ptak AJ. Preface of the 18th International Conference on Molecular Beam Epitaxy (MBE 2014). Journal of Crystal Growth. 2015 Jul 28;425:1.
• Kong W, Jiao WY, Li JC, Collar K, Kim TH, Leach JH, et al. Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy. Applied Physics Letters. 2015 Jul 20;107(3).
• Luo G, Yang S, Li J, Arjmand M, Szlufarska I, Brown AS, et al. First-principles studies on molecular beam epitaxy growth of GaA s1-x B ix. Physical Review B - Condensed Matter and Materials Physics. 2015 Jul 14;92(3).
• Li J, Forghani K, Guan Y, Jiao W, Kong W, Collar K, et al. GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation. AIP Advances. 2015 Jun 1;5(6).
• Wood AW, Babcock SE, Li J, Brown AS. Increased bismuth concentration in MBE GaAs1-xBix films by oscillating III/V flux ratio during growth. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2015 May 1;33(3).
• Knight MW, Coenen T, Yang Y, Brenny BJM, Losurdo M, Brown AS, et al. Gallium plasmonics: deep subwavelength spectroscopic imaging of single and interacting gallium nanoparticles. ACS nano. 2015 Feb;9(2):2049–60.
• Brown AS, Losurdo M. In Situ Characterization of Epitaxy. In: Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. 2015. p. 1169–209.
• Kong W, Mohanta A, Roberts AT, Jiao WY, Fournelle J, Kim TH, et al. Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2014 Sep 29;105(13).
• Forghani K, Guan Y, Losurdo M, Luo G, Morgan D, Babcock SE, et al. GaAs1-y-zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs. Applied Physics Letters. 2014 Sep 15;105(11).
• Li J, Kim TH, Forghani K, Jiao W, Kong W, Collar K, et al. Growth of GaAs1-xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics. Journal of Applied Physics. 2014 Jul 28;116(4).
• Yang Y, Akozbek N, Kim TH, Sanz JM, Moreno F, Losurdo M, et al. Ultraviolet-Visible Plasmonic Properties of Gallium Nanoparticles Investigated by Variable-Angle Spectroscopic and Mueller Matrix Ellipsometry. ACS Photonics. 2014 Jul 16;1(7):582–9.
• Ahmed MU, Saaem I, Wu PC, Brown AS. Personalized diagnostics and biosensors: a review of the biology and technology needed for personalized medicine. Critical reviews in biotechnology. 2014 Jun;34(2):180–96.
• Losurdo M, Bergmair I, Dastmalchi B, Kim TH, Giangregroio MM, Jiao W, et al. Graphene as an electron shuttle for silver deoxidation: Removing a key barrier to plasmonics and metamaterials for sers in the visible. Advanced Functional Materials. 2014 Apr 2;24(13):1864–78.
• Losurdo M, Yi C, Suvorova A, Rubanov S, Kim T-H, Giangregorio MM, et al. Demonstrating the capability of the high-performance plasmonic gallium-graphene couple. ACS nano. 2014 Mar;8(3):3031–41.
• Zhong M, Roberts J, Kong W, Brown AS, Steckl AJ. P-type GaN grown by phase shift epitaxy. Applied Physics Letters. 2014 Jan 6;104(1).
• Sanz JM, Ortiz D, Alcaraz de la Osa R, Saiz JM, González F, Brown AS, et al. Metals for UV plasmonics. In: Optics InfoBase Conference Papers. 2014.
• Sanz JM, Ortiz D, Alcaraz de la Osa R, Saiz JM, González F, Brown AS, et al. Metals for UV plasmonics. Optics InfoBase Conference Papers. 2014 Jan 1;
• Jiao W, Kong W, Li J, Collar K, Kim TH, Brown AS. The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy. Applied Physics Letters. 2013 Oct 14;103(16).
• Sanz JM, Ortiz D, Alcaraz De La Osa R, Saiz JM, González F, Brown AS, et al. UV plasmonic behavior of various metal nanoparticles in the near- and far-field regimes: Geometry and substrate effects. Journal of Physical Chemistry C. 2013 Sep 26;117(38):19606–15.
• Ahmed MU, Brown AS, Wu PC. Point-of-Care Devices. 2013 Aug 29;1:372–80.
• Yang Y, Callahan JM, Kim T-H, Brown AS, Everitt HO. Ultraviolet nanoplasmonics: a demonstration of surface-enhanced Raman spectroscopy, fluorescence, and photodegradation using gallium nanoparticles. Nano letters. 2013 Jun;13(6):2837–41.
• Losurdo M, Brown AS, Bruno G. Real-time ellipsometry for probing charge-transfer processes at the nanoscale. In: Ellipsometry at the Nanoscale. 2013. p. 453–91.
• Losurdo M, Bergmair I, Dastmalchi B, Kim T-H, Giangregroio MM, Jiao W, et al. Graphene as an Electron Shuttle for Silver Deoxidation: Removing a Key Barrier to Plasmonics and Metamaterials for SERS in the Visible. Advanced Functional Materials. 2013;
• Kuech TF, Mawst LJ, Brown AS. Mixed semiconductor alloys for optical devices. Annual review of chemical and biomolecular engineering. 2013 Jan;4:187–209.
• Li B, Yi C, Brown A, Fischer MC, Warren WS. Homodyne near-degenerate four-wave-mixing microscopy for graphene imaging and biomedical applications. In: 2012 Conference on Lasers and Electro-Optics, CLEO 2012. 2012.
• Ahmed MU, Brown AS, Wu PC. Point-of-Care Devices. In: Genomic and Personalized Medicine. 2012. p. 372–80.
• Li B, Cheng Y, Liu J, Yi C, Brown AS, Yuan H, et al. Direct Optical Imaging of Graphene In Vitro by Nonlinear Femtosecond Laser Spectral Reshaping. Nano Letters. 2012 Nov 14;12(11):5936–40.
• Yi C, Kim T-H, Jiao W, Yang Y, Lazarides A, Hingerl K, et al. Evidence of plasmonic coupling in gallium nanoparticles/graphene/SiC. Small (Weinheim an der Bergstrasse, Germany). 2012 Sep;8(17):2721–30.
• Cho E, Brown A, Kuech TF. Chemical characterization of DNA-immobilized InAs surfaces using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure. Langmuir : the ACS journal of surfaces and colloids. 2012 Aug;28(32):11890–8.
• Bianco GV, Giangregorio MM, Capezzuto P, Losurdo M, Kim TH, Brown AS, et al. Plasma-plasmonics synergy in the Ga-catalyzed growth of Si-nanowires. Materials Science and Engineering: B. 2012 Jun 5;177(10):700–4.
• Kim TH, Losurdo M, Choi S, Yoon I, Bruno G, Brown A. Real-time studies of In-adlayer during PAMBE of InGaN/GaN MQWs. Physica Status Solidi (C) Current Topics in Solid State Physics. 2012 Mar 1;9(3–4):1036–9.
• Dedigama A, Angelo M, Torrione P, Kim TH, Wolter S, Lampert W, et al. Hemin-functionalized InAs-based high sensitivity room temperature NO gas sensors. Journal of Physical Chemistry C. 2012 Jan 12;116(1):826–33.
• Losurdo M, Wu PC, Kim T-H, Bruno G, Brown AS. Cysteamine-based functionalization of InAs surfaces: revealing the critical role of oxide interactions in biasing attachment. Langmuir : the ACS journal of surfaces and colloids. 2012 Jan;28(2):1235–45.
• McKay KS, Lu FP, Kim J, Yi C, Brown AS, Hawkins AR. Erratum: Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction (Applied Physics Letters (2007) 90 (222111)). Applied Physics Letters. 2012;100(12).
• Li B, Yi C, Brown A, Fischer MC, Warren WS. Homodyne near-degenerate four-wave-mixing microscopy for graphene imaging and biomedical applications. In: CLEO: Science and Innovations, CLEO_SI 2012. 2012.
• Cho EK, Wu P, Ahmed M, Brown A, Kuech TF. Characterization of immobilized DNA on sulfur-passivated InAs surfaces. Materials Research Society Symposium Proceedings. 2011 Dec 1;1301:259–65.
• Albella P, Garcia-Cueto B, González F, Moreno F, Wu PC, Kim T-H, et al. Shape matters: plasmonic nanoparticle shape enhances interaction with dielectric substrate. Nano letters. 2011 Sep;11(9):3531–7.
• Wu PC, Losurdo M, Kim TH, Garcia-Cueto B, Moreno F, Bruno G, et al. Ga-Mg Core-shell nanosystem for a novel full color plasmonics. Journal of Physical Chemistry C. 2011 Jul 21;115(28):13571–6.
• Ruffin PB, Brantley CL, Edwards E, Roberts JK, Chew W, Warren LC, et al. Nanotechnology research and development for military and industrial applications. Proceedings of SPIE - The International Society for Optical Engineering. 2011 May 23;7980.
• Wu PC, Kim T-H, Suvorova A, Giangregorio M, Saunders M, Bruno G, et al. GaMg alloy nanoparticles for broadly tunable plasmonics. Small (Weinheim an der Bergstrasse, Germany). 2011 Mar;7(6):751–6.
• Bruno G, Losurdo M, Kim TH, Brown A. Adsorption and desorption kinetics of Ga on GaN(0001): Application of Wolkenstein theory. Physical Review B - Condensed Matter and Materials Physics. 2010 Aug 26;82(7).
• Wu PC, Khoury CG, Kim T-H, Yang Y, Losurdo M, Bianco GV, et al. Demonstration of surface-enhanced Raman scattering by tunable, plasmonic gallium nanoparticles. Journal of the American Chemical Society. 2009 Sep;131(34):12032–3.
• Losurdo M, Giangregorio MM, Lisco F, Capezzuto P, Bruno G, Wolter SD, et al. InAs(100) surfaces cleaning by an As-Free low-temperature 100°C treatment. Journal of the Electrochemical Society. 2009 Mar 4;156(4).
• Choi S, Kim TH, Wu P, Brown A, Everitt HO, Losurdo M, et al. Band bending and adsorption/desorption kinetics on N-polar GaN surfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2009 Feb 17;27(1):107–12.
• Di Franco C, Elia A, Spagnolo V, Scamarcio G, Lugarà PM, Ieva E, et al. Optical and Electronic NO(x) Sensors for Applications in Mechatronics. Sensors (Basel, Switzerland). 2009 Jan;9(5):3337–56.
• Wu PC, Losurdo M, Kim TH, Giangregorio M, Bruno G, Everitt HO, et al. Plasmonic Gallium Nanoparticles on Polar Semiconductors: Interplay between Nanoparticle Wetting, Localized Surface Plasmon Dynamics, and Interface Charge. Langmuir. 2009 Jan;25(2):924–30.
• Losurdo M, Wolter SD, Giangregorio MM, Lisco F, Angelo M, Lampert WV, et al. Interplay between surface chemistry and optical behavior of semiconductor-biomolecule functionalized sensing systems: An optical investigation by spectroscopic ellipsometry. Materials Research Society Symposium Proceedings. 2008 Dec 1;1133:19–24.
• Huang S, Huang PF, Feng ZC, Brown A, Lu W. Optical and material characteristics of InAs/GaAs quantum dots. Proceedings of SPIE - The International Society for Optical Engineering. 2008 Nov 21;7039.
• Garcia MA, Losurdo M, Wolter SD, Lampert WV, Bonaventura J, Bruno G, et al. Comparison of functionalized III-V semiconductor response for nitric oxide. Sensor Letters. 2008 Aug 1;6(4):627–34.
• Choi S, Kim TH, Wolter S, Brown A, Everitt HO, Losurdo M, et al. Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption. Physical Review B - Condensed Matter and Materials Physics. 2008 Mar 20;77(11).
• Pettinari G, Masia F, Capizzi M, Polimeni A, Losurdo M, Bruno G, et al. Experimental evidence of different hydrogen donors in n -type InN. Physical Review B - Condensed Matter and Materials Physics. 2008 Mar 11;77(12).
• Wu PC, Losurdo M, Kim TH, Bruno G, Brown AS, Everitt HO. Novel, real-time measurement of plasmon resonance - tailoring nanoparticle geometry optically. In: Optics InfoBase Conference Papers. 2008.
• Wu PC, Losurdo M, Kim TH, Bruno G, Brown AS, Everitt HO. Novel, real-time measurement of plasmon resonance - tailoring nanoparticle geometry optically. Optics InfoBase Conference Papers. 2008 Jan 1;
• Wu PC, Losurdo M, Kim TH, Bruno G, Brown AS, Everitt HO. Novel, real-time measurement of plasmon resonance - tailoring nanoparticle geometry optically. Optics InfoBase Conference Papers. 2008 Jan 1;
• Wu B, Wheeler D, Yi C, Yoon I, Jha S, Brown A, et al. InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs. 2007 International Semiconductor Device Research Symposium, ISDRS. 2007 Dec 1;
• Garcia MA, Losurdo M, Wolter SD, Kim TH, Lampert WV, Bonaventura J, et al. Functionalization and characterization of InAs and InP surfaces with hemin. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 Aug 7;25(4):1504–10.
• Losurdo M, Giangregorio MM, Bruno G, Kim TH, Choi S, Brown AS, et al. Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry. Applied Physics Letters. 2007 Aug;91(8).
• Losurdo M, Kim TH, Choi S, Wu P, Giangregorio MM, Bruno G, et al. Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 Jun 11;25(3):1014–8.
• Zhang W, Yi C, Brown A. Impact of arsenic species (As2 As4) on the relaxation and morphology of step-graded in Asx P1-x on InP substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 Jun 11;25(3):960–3.
• Choi S, Kim TH, Everitt HO, Brown A, Losurdo M, Bruno G, et al. Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 Jun 11;25(3):969–73.
• Uhlrich J, Garcia M, Wolter S, Brown AS, Kuech TF. Interfacial chemistry and energy band line-up of pentacene with the GaN (0 0 0 1) surface. Journal of Crystal Growth. 2007 Mar 1;300(1):204–11.
• Losurdo M, Giangregorio MM, Bruno G, Kim TH, Wu P, Choi S, et al. Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy. Applied Physics Letters. 2007 Jan 15;90(1).
• Wu PC, Kim T-H, Brown AS, Losurdo M, Bruno G, Everitt HO. Real-time plasmon resonance tuning of liquid Ga nanoparticles by in situ spectroscopic ellipsometry. Applied Physics Letters. 2007;90(10):103119.
• Wu PC, Losurdo M, Kim TH, Choi O, Bruno G, Brown AS. In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy. Journal Of Vacuum Science & Technology B. 2007;25(3):1019–23.
• Yoon I, Yi C, Kirn T, Brown AS, Seabaugh A. Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and SiO2 substrates. Journal Of Vacuum Science & Technology B. 2007;25(3):945–7.
• Huettel LG, Brown AS, Coonley KD, Gustafson MR, Kim J, Ybarra GA, et al. Fundamentals of ECE: A rigorous, integrated introduction to electrical and computer engineering. IEEE Transactions on Education. 2007;50(3):174–81.
• McKay KS, Lu FP, Kim J, Yi C, Brown AS, Hawkins AR. Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction. Applied Physics Letters. 2007;90(22).
• Huettel L, Brown A, Collins L, Coonley K, Gustafson M, Kim J, et al. A novel introductory course for teaching the fundamentals of electrical and computer engineering. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2006.
• Brown A, Ybarra G, Massoud H, Board J, Holmes J, Coonley K, et al. Redesign of the core curriculum at Duke University. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2006.
• Choi S, Kim TH, Brown A, Everitt HO, Losurdo M, Bruno G, et al. Kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces. Applied Physics Letters. 2006 Nov 13;89(18).
• Bruno G, Losurdo M, Giangregorio MM, Capezzuto P, Brown AS, Kim TH, et al. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN. Applied Surface Science. 2006 Oct;253(1):219–23.
• Morse M, Wu P, Choi S, Kim TH, Brown AS, Losurdo M, et al. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates. Applied Surface Science. 2006 Oct;253(1):232–5.
• Kim TH, Choi S, Wu P, Brown A, Losurdo M, Giangregorio MM, et al. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy. Physica Status Solidi (C) Current Topics in Solid State Physics. 2006 Jul 31;3:1583–6.
• Triplett GE, Brown AS, May GS. Strain monitoring in InAs-Al xGa 1-xAS ySb 1-y structures grown by molecular beam epitaxy. Applied Physics Letters. 2006 Jul 28;89(3).
• Losurdo M, Capezzuto P, Bruno G, Brown AS, Brown T, May G. Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions. Journal of Applied Physics. 2006 Jul 26;100(1).
• Triplett GE, Brown AS, May GS. Strain monitoring in InAs-AlxGa1-xAsySb1-y structures grown by molecular beam epitaxy. Applied Physics Letters. 2006 Jul;89(3):345–9.
• Losurdo M, Giangregorio MM, Bruno G, Kim TH, Wu P, Choi S, et al. Modification of InN properties by interactions with hydrogen and nitrogen. Materials Research Society Symposium Proceedings. 2006 May 15;892:155–60.
• Brown AS, Losurdo M, Capezzuto P, Bruno G, Brown T, May G. Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction. Journal of Applied Physics. 2006 May 1;99(9).
• Losurdo M, Giangregorio MM, Bruno G, Kim TH, Choi S, Brown A. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation. Physica Status Solidi (A) Applications and Materials Science. 2006 May 1;203(7):1607–11.
• Losurdo M, Bruno G, Kim TH, Choi S, Brown A. Study of the dielectric function of hexagonal InN: Impact of indium clusters and of native oxide. Applied Physics Letters. 2006 Mar 20;88(12).
• Triplett GE, Brown AS, May GS. Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures. Journal of Crystal Growth. 2006 Jan 15;286(2):345–9.
• Yi C, Kim T-H, Brown AS. InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters. Journal of Electronic Materials. 2006;35(9):1712–4.
• Brown AS, Kim T-H, Choi S, Wu P, Morse M, Losurdo M, et al. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy. Physica Status Solidi C: Current Topics in Solid State Physics. 2006;3:1531–5.
• Brown A, Ybarra G, Massoud H, Board J, Holmes J, Coonley K, et al. Redesign of the core curriculum at Duke University. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2006.
• Huettel L, Brown A, Collins L, Coonley K, Gustafson M, Kim J, et al. A novel introductory course for teaching the fundamentals of electrical and computer engineering. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2006.
• Morse M, Wu P, Choi S, Kim TH, Brown AS, Losurdo M, et al. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates. Applied Surface Science. 2006;253(1 SPEC ISS):232–5.
• Bruno G, Losurdo M, Giangregorio MM, Capezzuto P, Brown AS, Kim T-H, et al. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN. Applied Surface Science. 2006;253(1 SPEC ISS):219–23.
• Kim T-H, Choi S, Brown AS, Losurdo M, Bruno G. Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy. Applied Physics Letters. 2006;89(2):021916.
• Garcia MA, Wolter SD, Kim T-H, Choi S, Baier J, Brown A, et al. Surface oxide relationships to band bending in GaN. Appl Phys Lett (USA). 2006;88(1).
• Kim TH, Choi S, Morse M, Wu P, Yi C, Brown A, et al. Impact of unintentional and intentional nitridation of the 6H-SiC(0001)Si substrate on GaN epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005 Dec 1;23(3):1181–5.
• Losurdo M, Bruno G, Kim TH, Choi S, Brown A, Moto A. Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry. Journal of Crystal Growth. 2005 Oct 15;284(1–2):156–65.
• Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Kim TH, Choi S, et al. Remote plasma assisted MOCVD growth of GaN on 4H-SiC: Growth mode characterization exploiting ellipsometry. EPJ Applied Physics. 2005 Sep 1;31(3):159–64.
• Seo SW, Cho SY, Huang S, Jokerst NM, Brown AS. Pulse response tuning of high speed InGaAs thin film MSM photodetector using external RCL loads. Proceedings of SPIE - The International Society for Optical Engineering. 2005 Jul 21;5726:52–60.
• Losurdo M, Capezzuto P, Bruno G, Brown A, Kim TH, Yi C, et al. Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001). Applied Physics Letters. 2005 Jan 10;86(2).
• Collins LM, Huettel LG, Brown AS, Ybarra GA, Holmes JS, Board JA, et al. Theme-based redesign of the duke university ECE curriculum: The first steps. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2005. p. 14313–26.
• Brown AS. Flat, cheap, and under control [electrochemical mechanical planarization]. IEEE Spectr (USA). 2005;42(1):40–5.
• Brown AS, Losurdo M, Kim TH, Giangregorio MM, Choi S, Morse M, et al. The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE. Crystal Research and Technology. 2005;40(10–11):997–1002.
• Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Brown AS, Kim T-H, et al. Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen. Journal of Electronic Materials. 2005;34(4):457–65.
• Seo SW, Cha C, Cho SY, Huang S, Jokerst NM, Brooke MA, et al. Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2004 Dec 1;1:222–3.
• Song I, Seo SW, Hyun S, Kim D, Huang S, Brooke M, et al. A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2004 Dec 1;2:517–8.
• Huettel L, Brown A, Gustafson M, Massoud H, Ybarra G, Collins L. Work in progress: Theme-based redesign of an electrical and computer engineering curriculum. In: Proceedings - Frontiers in Education Conference, FIE. 2004.
• Losurdo M, Giangregorio MM, Bruno G, Brown A, Kim TH. Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen. Applied Physics Letters. 2004 Nov 1;85(18):4034–6.
• Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Namkoong G, Doolittle WA, et al. Interaction of GaN epitaxial layers with atomic hydrogen. Applied Surface Science. 2004 Aug 15;235(3):267–73.
• Brown AS, Losurdo M, Bruno G, Brown T, May G. Fundamental reactions controlling anion exchange during the synthesis of Sb/As mixed-anion heterojunctions. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2004 Jul 1;22(4):2244–9.
• Seo SW, Jokerst NM, Cho SY, Brown AS, Huang S, Shin JJ, et al. High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors. IEEE Journal on Selected Topics in Quantum Electronics. 2004 Jul 1;10(4):686–93.
• Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Namkoong G, Doolittle WA, et al. Interplay between GaN polarity and surface reactivity towards atomic hydrogen. Journal of Applied Physics. 2004 Jun 15;95(12):8408–18.
• Losurdo M, Bruno G, Brown A, Kim TH. Study of the temperature-dependent interaction of 4H-SiC and 6H-SiC surfaces with atomic hydrogen. Applied Physics Letters. 2004 May 17;84(20):4011–3.
• Losurdo M, Giuva D, Giangregorio MM, Bruno G, Brown AS. Spectroscopic ellipsometry characterization of interface reactivity in GaAs-based superlattices. Thin Solid Films. 2004 May 1;455–456:457–61.
• Triplett GE, Brown AS, May GS. Charge modification in InAs/AlxGa1-xSb HEMT structures. Journal of Crystal Growth. 2004 Apr 15;265(1–2):47–52.
• Jokerst NM, Cho SY, Seo SW, Kuo HF, Shin J, Brooke MA, et al. Planar Lightwave Integrated Circuits Using Thin Film Optoelectronic Devices. In: Optics InfoBase Conference Papers. 2004.
• Seo S-W, Cho S-Y, Huang S, Brown AS, Jokerst NM. High speed InGaAs thin film MSM photodetector characterization using a fiber-based electro-optic sampling system. Proceedings of SPIE - The International Society for Optical Engineering. 2004;5353:48–56.
• Losurdo M, Giuva D, Bruno G, Huang S, Kim T-H, Brown AS. The surface modification and reactivity of LiGaO2 substrates during GaN epitaxy. Journal of Crystal Growth. 2004;264(1–3):139–49.
• Huang Z, Cha C, Chen S, Sarmiento T, Shen JJ, Jokerst NM, et al. InGaAs MSM Photodetectors Modeling Using DOE Analysis. Proceedings of SPIE - The International Society for Optical Engineering. 2004;5178:148–55.
• Kuech TF, Liu N, Kim TH, Yi C, Brown AS. Alternative substrates for InP and related materials. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2003 Jul 25;562.
• Namkoong G, Doolittle WA, Brown AS, Losurdo M, Giangregorio MM, Bruno G. The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films. Journal of Crystal Growth. 2003 May 1;252(1–3):159–66.
• Wang YQ, Wang ZL, Shen JJ, Brown A. Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots. Journal of Crystal Growth. 2003 May 1;252(1–3):58–67.
• Jokerst NM, Brooke MA, Cho SY, Wilkinson S, Vrazel M, Fike S, et al. The heterogeneous integration of optical interconnections into integrated microsystems. IEEE Journal on Selected Topics in Quantum Electronics. 2003 Mar 1;9(2):350–60.
• Seo SW, Shen JJ, Jokerst NM, Brown AS. Large Area, High Speed InGaAs Thin Film MSMs for Heterogeneously Integrated Optoelectronics. In: Optics InfoBase Conference Papers. 2003.
• Brown AS. Superconducting circuit makers pin hopes on wireless filters. IEEE Spectr (USA). 2003;40(4):3pp.
• Seo SW, Shen JJ, Jokerst NM, Brown AS. Large area, high speed InGaAs thin film MSMs for heterogeneously integrated optoelectronics. OSA Trends in Optics and Photonics Series. 2003 Jan 1;88:460–3.
• Doolittle WA, Namkoong G, Carver AG, Brown AS. Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology. Solid-State Electronics. 2003;47(12):2143–7.
• Namkoong G, Doolittle WA, Brown AS, Losurdo M, Giangregorio MM, Bruno G. Effect of buffer design on AlGaN/AlN/GaN heterostrucutres by MBE. Materials Research Society Symposium - Proceedings. 2003 Jan 1;798:359–64.
• Losurdo M, Giuva D, Capezzuto P, Bruno G, Brown T, Triplett G, et al. A study of anion exchange reactions at GaAs surfaces for heterojunction interface control. Materials Research Society Symposium - Proceedings. 2003 Jan 1;799:97–102.
• Losurdo M, Giangregorio MM, Bruno G, Brown AS, Doolittle WA, Namkoong G, et al. Surface potential measurements of doping and defects in p-GaN. Materials Research Society Symposium - Proceedings. 2003 Jan 1;798:805–10.
• Kim TH, Yi C, Brown AS, Moran P, Kuech T. The Heterogeneous Integration of InAlAs/InGaAs Heterojunction Diodes on GaAs: Impact of Wafer Bonding on Structural and Electrical Characteristics. Proceedings IEEE Lester Eastman Conference on High Performance Devices. 2002 Dec 1;384–92.
• Brown T, Brown A, May G. Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 Jul 1;20(4):1771–6.
• Wang YQ, Wang ZL, Brown T, Brown A, May G. Thermodynamic analysis of anion exchange during heteroepitaxy. Journal of Crystal Growth. 2002 Jul 1;242(1–2):5–14.
• Wang YQ, Wang ZL, Shen JJ, Brown AS. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange. Solid State Communications. 2002 Jun 1;122(10):553–6.
• Namkoong G, Doolittle WA, Brown AS, Losurdo M, Capezzuto P, Bruno G. Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 May 1;20(3):1221–8.
• Losurdo M, Capezzuto P, Bruno G, Namkoong G, Doolittle WA, Brown AS. Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers. Journal of Applied Physics. 2002 Feb 15;91(4):2508–18.
• Seo S, Lee KK, Kang S, Huang S, Doolittle WA, Jokerst NM, et al. The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon. IEEE Photonics Technology Letters. 2002 Feb 1;14(2):185–7.
• Namkoong G, Doolittle WA, Brown AS, Losurdo M, Capezzuto P, Bruno G. Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics. Journal of Applied Physics. 2002 Feb 1;91(3):2499–507.
• Cheung M, Namkoong G, Furis M, Chen F, Cartwright AN, Doolittle WA, et al. Time resolved optical studies of InGaN layers grown on LGO. Materials Research Society Symposium - Proceedings. 2002 Jan 1;743:659–64.
• Seo S, Kong S, Huang S, Lee K, Doolittle W, Lokerst N, et al. Thin Film GaN Metal-semiconductor-metal Photodetectors Integrated onto Silicon. In: Optics InfoBase Conference Papers. 2002.
• Losurdo M, Capezzuto P, Bruno G, Namkoong G, Doolittle WA, Brown AS. Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD. Physica Status Solidi (A) Applied Research. 2002;190(1):43–51.
• Losurdo M, Capezzuto P, Bruno G, Namkoong G, Doolittle WA, Brown AS. Thickness influence on optical and morphological properties of HVPE GaN layers grown on MOCVD GaN layers. Physica Status Solidi (A) Applied Research. 2002;190(1):53–8.
• Losurdo M, Capezzuto P, Bruno G, Namkoong G, Doolittle WA, Brown AS. Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD. In: Physica Status Solidi (A) Applied Research. 2002. p. 43–51.
• Yi C, Kim TH, Brown AS. InP-based AlInAs/GaAs0.51Sb0.49/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications. Journal of Electronic Materials. 2002 Jan 1;31(2):95–8.
• Seo S, Kang S, Huang S, Lee K, Doolittle W, Jokerst N, et al. Thin film GaN metal-semiconductor-metal photodetectors integrated onto silicon. Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. 2002 Jan 1;630–1.
• Yi C, Metzger RA, Brown AS. The effect of strained Al0.7In0.3As emitter layers on abrupt N-p⁺ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors. Journal of Electronic Materials. 2002 Jan 1;31(8):841–7.
• Doolittle WA, Namkoong G, Carver A, Henderson W, Jundt D, Brown AS. III-nitride growth on lithium niobate: A new substrate material for polarity engineering in III-nitride heteroepitaxy. Materials Research Society Symposium - Proceedings. 2002 Jan 1;743:9–14.
• Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Namkoong G, Alan Doolittle W, et al. A chemical perspective of GaN polarity: The use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity. Materials Research Society Symposium - Proceedings. 2002 Jan 1;722:103–8.
• Triplett G, May G, Brown A. Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks. Solid-State Electronics. 2002 Jan 1;46(10):1519–24.
• Brown AS, Doolittle WA, Jokerst NM, Kang S, Huang S, Seo SW. Heterogeneous materials integration: Compliant substrates to active device and materials packaging. Materials Science and Engineering: B. 2001 Dec 19;87(3):317–22.
• Brown A, Llewellyn D, Usselman M. Institutional self-assessments as change agents: Georgia tech's two year experience. ASEE Annual Conference Proceedings. 2001 Dec 1;5947–58.
• Wang YQ, Wang ZL, Brown T, Brown A, May G. Interfacial roughening in lattice-matched GaInP/GaAs heterostructures. Thin Solid Films. 2001 Nov 1;397(1–2):162–9.
• Lee KK, Doolittle WA, Kim TH, Brown AS, May GS, Stock SR, et al. A comparative study of surface reconstruction of wurtzite GaN on (0 0 0 1) sapphire by RF plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 2001 Sep 1;231(1–2):8–16.
• Seo SW, Lee KK, Kang S, Huang S, Doolittle WA, Jokerst NM, et al. GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy. Applied Physics Letters. 2001 Aug 27;79(9):1372–4.
• Shen JJ, Brown AS, Wang Y, Wang ZL. Self-assembled quantum dot transformations via anion exchange. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2001 Jul 1;19(4):1463–6.
• Losurdo M, Capezzuto P, Bruno G, Namkoong G, Doouttle WA, Brown AS. The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation? Physica Status Solidi (A) Applied Research. 2001;188(2):561–5.
• Losurdo M, Capezzuto P, Bruno G, Namkoong G, Doolittle WA, Brown AS. The chemistry of sapphire nitridation in relation to the GaN structural quality: Why low temperature 200°C nitridation? Phys Status Solidi A (Germany). 2001;188(2):561–5.
• Triplett G, May G, Brown A. Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks. In: 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. 2001. p. 264–5.
• Vrazel M, Chang JJ, Song ID, Chung KS, Brooke M, Jokerst NM, et al. Highly alignment tolerant InGaAs inverted MSM photodetector heterogeneously integrated on a differential Si CMOS receiver operating at 1 Gbps. Proceedings - Electronic Components and Technology Conference. 2001 Jan 1;8–13.
• Brown AS, Jokerst NM, Doolittle A, Brooke M, Kuech TF, Seo SW, et al. Heterogeneous integration: From substrate technology to active packaging. Technical Digest-International Electron Devices Meeting. 2001 Jan 1;197–200.
• Kang S, Doolittle WA, Lee KK, Dai ZR, Wang ZL, Stock SR, et al. Characterization of algan/gan structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy. Journal of Electronic Materials. 2001 Jan 1;30(3):156–61.
• Doolittle WA, Brown AS, Kang S, Seo SW, Huang S, Jokerst NM. Recent advances in III-nitride devices grown on lithium gallate. Phys Status Solidi A (Germany). 2001;188(2):491–5.
• Namkoong G, Doolittle WA, Brown AS. Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2000 Dec 25;77(26):4386–8.
• Lee K, Seo S, Vrazel M, Huang S, Doolittle W, Jokerst N, et al. GaN thin film material bonded to host substrates using selective chemical etching. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2000 Dec 1;2:559–60.
• Shen JJ, Kim TH, Brown AS. Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates. IEEE International Symposium on Compound Semiconductors, Proceedings. 2000 Dec 1;131–5.
• Jokerst NM, Brooke MA, Laskar J, Wills DS, Brown AS, Vendier O, et al. Smart photonics: Optoelectronics integrated with Si CMOS VLSI circuits. Proceedings of SPIE - The International Society for Optical Engineering. 2000 Dec 1;4109:241–51.
• Vrazel M, Chang JJ, Brooke M, Jokerst NM, Joo Y, Carastro L, et al. Analysis of alignment tolerant hybrid optoelectronic receivers for high density interconnection substrates. Proceedings - Electronic Components and Technology Conference. 2000 Dec 1;223–30.
• Vrazel M, Chang JJ, Brooke M, Jokerst NM, Dagnall G, Brown A. Alignment tolerant InP/Si CMOS hybrid integrated photoreceivers operating at 0.9 Gbps. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2000 Dec 1;2:884–5.
• Lee KK, Brown T, Dagnall G, Bicknell-Tassius R, Brown A, May G. Neural Network Modeling of Molecular Beam Epitaxy. American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD. 2000 Dec 1;366:119–27.
• Brown AS, Doolittle WA. Status and promise of compliant substrate technology. Applied Surface Science. 2000 Oct 9;166(1):392–8.
• Wang YQ, Wang ZL, Brown T, Brown A, May G. Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures. Applied Physics Letters. 2000 Jul 10;77(2):223–5.
• Lee KK, Doolittle WA, Brown AS, May GS, Stock SR. Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 May 1;18(3):1448–52.
• Doolittle WA, Kang S, Brown A. MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications. Solid-State Electronics. 2000 Feb 1;44(2):229–38.
• Kang S, Doolittle WA, Stock SR, Brown AS. Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO₂ at low growth temperature. Materials Science Forum. 2000;338:II/-.
• Lee KK, Brown T, Dagnall G, Bicknell-Tassius R, Brown A, May G. Neural network modeling of molecular beam epitaxy. In: ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE). 2000. p. 119–27.
• Jokerst NM, Brooke MA, Laskar J, Wills DS, Brown AS, Ingram MA. Building collaborative teams for multi-disciplinary educational projects in optoelectronics. Proceedings of SPIE - The International Society for Optical Engineering. 2000 Jan 1;3831:25–35.
• Vrazel M, Chang JJ, Brooke M, Jokerst NM, Dagnall G, Brown A. Alignment tolerant hybrid photoreceivers using inverted MSMs. LEOS Summer Topical Meeting. 2000 Jan 1;23–4.
• Lee KK, Brown T, Dagnall G, Bicknell-Tassius R, Brown A, May GS. Using neural networks to construct models of the molecular beam epitaxy process. IEEE Transactions on Semiconductor Manufacturing. 2000 Jan 1;13(1):34–45.
• Kang S, Doolittle WA, Stock SR, Brown AS. Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO2 at low growth temperature. Materials Science Forum. 2000;338 (II:1499–502.
• Brown AS, Doolittle WA, Kang S, Shen JJ, Wang ZL, Dai Z. Growth of GaN on lithium gallate (LiGaO2) substrates for material integration. Journal of Electronic Materials. 2000 Jan 1;29(7):894–6.
• Wang YQ, Wang ZL, Brown T, Brown A, May G. Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures. Journal of Electronic Materials. 2000 Jan 1;29(12):1372–9.
• Lee K, Seo S, Huang S, Joo Y, Doolittle WA, Fike S, et al. Design of a smart pixel multispectral imaging array using 3D stacked thin film detectors on Si CMOS circuits. LEOS Summer Topical Meeting. 2000 Jan 1;57–8.
• Namkoong G, Doolittle WA, Kang S, Sa H, Brown AS, Stock SR. Low temperature nitridation combined with high temperature buffer annealing for high quality GaN grown by plasma-assisted MBE. MRS Internet Journal of Nitride Semiconductor Research. 2000 Jan 1;5.
• Kim TH, Brown AS, Metzger RA. Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy. Journal of Electronic Materials. 2000 Jan 1;29(2):215–21.
• Jokerst NM, Brooke MA, Laskar J, Wills DS, Brown AS, Vrazel M, et al. Microsystem Optoelectronic Integration for Mixed Multisignal Systems. IEEE Journal on Selected Topics in Quantum Electronics. 2000 Jan 1;6(6):1231–7.
• Jokerst NM, Brooke MA, Laskar J, Wills DS, Brown AS, Vendier O, et al. Smart photonics: Optoelectronics integrated onto Si CMOS circuits. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 1999 Dec 1;2:423–4.
• Kang S, Doolittle WA, Brown AS, Stock SR. Electrical and structural characterization of AlxGa1-xN/GaN heterostructures grown on LiGaO2 substrates. Applied Physics Letters. 1999 May 31;74(22):3380–2.
• Matyi RJ, Doolittle WA, Brown AS. High resolution X-ray diffraction analyses of GaN/LiGaO2. Journal of Physics D: Applied Physics. 1999 May 21;32(10 A).
• Bond SW, Vendier O, Lee M, Jung S, Vrazel M, Lopez-Lagunas A, et al. Three-layer 3-D silicon system using through-Si vertical optical interconnections and Si CMOS hybrid building blocks. IEEE Journal on Selected Topics in Quantum Electronics. 1999 Mar 1;5(2):276–86.
• Kim TH, Brown AS, Metzger RA. Optical and structural properties of strained InAlAs/InAsxP1-x multi-quantum wells grown by solid source molecular beam epitaxy. Journal of Applied Physics. 1999 Jan 1;86(5):2622–7.
• Chen YC, Chin P, Ingram D, Lai R, Grundbacher R, Barsky M, et al. Composite-channel InP HEMT for W-band power amplifiers. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1999 Jan 1;305–6.
• Doolittle WA, Brown AS. Compliant substrate processes. Materials Research Society Symposium - Proceedings. 1999 Jan 1;570:225–34.
• Dagnall G, Stock SR, Brown AS. Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B: Substrate temperature and arsenic species effects. Journal of Crystal Growth. 1999 Jan 1;201:242–7.
• Dagnall G, Shen JJ, Kim TH, Metzger RA, Brown AS, Stock SR. Solid source MBE growth of InAsP/InP quantum wells. Journal of Electronic Materials. 1999 Jan 1;28(8):933–8.
• Dagnall G, Brown AS, Stock SR. Arsenic incorporation in InAsP/InP quantum wells. Journal of Electronic Materials. 1999 Jan 1;28(10):1108–10.
• Shen JJ, Jokerst NM, Brown AS. Compliant substrate strain modulated epitaxy for WDM laser arrays. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 1998 Dec 1;1:95–6.
• Doolittle WA, Kropewnicki T, Carter-Coman C, Stock S, Kohl P, Jokerst NM, et al. Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 Jan 1;16(3):1300–4.
• Doolittle WA, Kang S, Kropewnicki TJ, Stock S, Kohl PA, Brown AS. MBE growth of high quality GaN on LiGaO2. J Electron Mater (USA). 1998;27(8):58–60.
• Shen JJ, Brown AS, Metzger RA, Sievers B, Bottomley L, Eckert P, et al. Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 Jan 1;16(3):1326–9.
• Brown AS. Compliant substrate technology: Status and prospects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 Jan 1;16(4):2308–12.
• Kropewnicki TJ, Doolittle WA, Carter-Coman C, Kang S, Kohl PA, Jokerst NM, et al. Selective wet etchinq of lithium gallate. Journal of the Electrochemical Society. 1998 Jan 1;145(5).
• Carter-Coman C, Brown AS, Metzger RA, Jokerst NM, Pickering J, Bottomley LA. A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates. Applied Physics Letters. 1997 Nov 10;71(19):2773–5.
• Carter-Coman C, Bicknell-Tassius R, Brown AS, Jokerst NM. Metastability modeling of compliant substrate critical thickness using experimental strain relief data. Applied Physics Letters. 1997 Sep 8;71(10):1344–6.
• Carter-Coman C, Bicknell-Tassius R, Brown AS, Jokerst NM. Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction. Applied Physics Letters. 1997 Mar 31;70(13):1754–6.
• May P, Lee M, Wilkinson ST, Vendier O, Ho Z, Bond SW, et al. A 100 Mbps, LED through-wafer optoelectronic link for multicomputer interconnection networks. Journal of Parallel and Distributed Computing. 1997 Feb 25;41(1):3–19.
• Bicknell-Tassius RN, Lee K, Brown AS, Dagnall G, May G. The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects. Applied Physics Letters. 1997 Jan 6;70(1):52–4.
• Carter-Coman C, Bicknell-Tassius R, Benz RG, Brown AS, Jokerst NM. Analysis of GaAs substrate removal etching with citric acid:H ₂O ₂ and NH ₄OH:H ₂O ₂ for application to compliant substrates. Journal of the Electrochemical Society. 1997;144(2):L29–31.
• Carter-Coman C, Bicknell-Tassius R, Brown AS, Jokerst NM. Compliant substrates for reduction of strain relief in mismatched overlayers. Materials Research Society Symposium - Proceedings. 1997 Jan 1;441:361–6.
• Cowles J, Metzger RA, Gutierrez-Aitken A, Brown AS, Streit D, Oki A, et al. Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1997 Jan 1;548–50.
• Brown T, Lee K, Dagnall G, Kromann R, Bicknell-Tassius R, Brown A, et al. Modeling MBE RHEED signals using PCA and neural networks. In: Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. 1997. p. 33–6.
• Doolittle WA, Kropewnicki T, Carter-Coman C, Stock S, Kohl P, Jokerst NM, et al. Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate. Materials Research Society Symposium - Proceedings. 1997 Jan 1;482:283–8.
• Bicknell-Tassius RN, Lee K, Brown AS, Dagnall G, May G. The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects utilizing the design of experiments approach. Journal of Crystal Growth. 1997 Jan 1;175–176(PART 2):1131–7.
• Wang SC, Cross J, Chai SM, Lopez A, Park J, Ingram MA, et al. Coupling efficiency of an alignment-tolerant, single fiber, bi-directional link. Proceedings - Electronic Components and Technology Conference. 1997 Jan 1;30–6.
• Fournier F, Metzger RA, Doolittle A, Brown AS, Carter-Coman C, Jokerst NM, et al. Growth dynamics of InGaAs/GaAs by MBE. Journal of Crystal Growth. 1997 Jan 1;175–176(PART 1):203–10.
• Carter-Coman C, Bicknell-Tassius R, Benz RG, Brown AS, Jokerst NM. Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates. Journal of the Electrochemical Society. 1997 Jan 1;144(2).
• Kromann RF, Bicknell-Tassius RN, Brown AS, Dorsey JF, Lee K, May G. Real-time monitoring of RHEED using machine vision techniques. Journal of Crystal Growth. 1997 Jan 1;175–176(PART 1):334–9.
• Fournier F, Metzger RA, Doolittle A, Brown AS, Carter-Coman C, Jokerst NM, et al. Growth dynamics of InGaAs/GaAs by MBE. Journal of Crystal Growth. 1997;175–176(PART 1):203–10.
• Brown AS, Bhattacharya P, Singh J, Zaman P, Sen S, Turco F. Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature. Applied Physics Letters. 1996 Dec 1;68(2):220–2.
• Lee KK, Bicknell-Tassius R, Dagnall G, Brown A, May G. Statistical experimental design for MBE process characterization. Proceedings of the IEEE/CPMT International Electronic Manufacturing Technology (IEMT) Symposium. 1996 Dec 1;378–85.
• Cat HH, Gentile A, Eble JC, Lee M, Vendier O, Joo YJ, et al. SIMPil: An OE integrated SIMD architecture for focal plane processing applications. International Conference on Massively Parallel Processing Using Optical Interconnections (MPPOI), Proceedings. 1996 Dec 1;44–52.
• Carter-Coman C, Brown AS, Bicknell-Tassius R, Jokerst NM, Allen M. Strain-modulated epitaxy: A flexible approach to 3-D band structure engineering without surface patterning. Applied Physics Letters. 1996 Jul 8;69(2):257–9.
• Carter-Coman C, Brown AS, Jokerst NM, Dawson DE, Bicknell-Tassius R, Feng ZC, et al. Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology. Journal of Electronic Materials. 1996 Jan 1;25(7):1044–8.
• Gilbert EP, Reynolds PA, Brown AS, White JW. n-paraffin solid solutions: modification of phase separation with carbon number. Chem Phys Lett (Netherlands). 1996;255(4–6):373–7.
• Carter-Coman C, Brown AS, Bicknell-Tassius R, Jokerst NM, Fournier F, Dawson DE. Strain-modulated epitaxy: Modification of growth kinetics via patterned, compliant substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1996 Jan 1;14(3):2170–4.
• Carter-Coman C, Brown AS, Bicknell-Tassius R, Jokerst NM, Allen M. Strain-modulated epitaxy: A flexible approach to 3-D band structure engineering without surface patterning. Applied Physics Letters. 1995 Dec 1;257.
• Brown AS, Bhattacharya P, Singh J, Zaman P, Sen S, Turco F. Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature. Applied Physics Letters. 1995 Dec 1;220.
• May P, Wilkinson ST, Jokerst NM, Wills DS, Lee M, Vendier O, et al. Design issues for through-wafer optoelectronic multicomputer interconnects. International Conference on Massively Parallel Processing Using Optical Interconnections (MPPOI), Proceedings. 1995 Dec 1;8–15.
• Jokerst NM, Brooke M, Vendier O, Wilkinson ST, Fike SM, Lee M, et al. Manufacturable multi-material integration: Compound semiconductor devices bonded to silicon circuitry. Proceedings of SPIE - The International Society for Optical Engineering. 1995 Sep 15;2524:152–63.
• Rosenbaum SE, Jelloian LM, Matloubian M, Larson LE, Nguyen L, Thompson MA, et al. 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators. IEEE Transactions on Microwave Theory and Techniques. 1995 Jan 1;43(4):927–32.
• Cat HH, Wills DS, Jokerst NM, Brooke MA, Brown AS. Three-dimensional, massively parallel, optically interconnected silicon computational hardware and architectures for high-speed IR scene generation. Proceedings of SPIE - The International Society for Optical Engineering. 1995 Jan 1;2469:141–5.
• Case M, Rosenbaum S, Ngo C, Matloubian M, Brown A, Henige J, et al. High efficiency, high gain K- and Ku-band InP-based HEMT MMIC amplifiers for array applications. 1994 Dec 1;49–54.
• Brown AS, Schmitz AE, Nguyen LD, Henige JA, Larson LE. Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE. IEEE International Conferece on Indium Phosphide and Related Materials. 1994;263–6.
• Brown AS, Schmitz AE, Nguyen LD, Henige JA, Larson LE. Growth of high performance In_xGa_1-xAs (.52 < x <.9) - (Al.₄₈In.₅₂As) high electron mobility transistors by MBE. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1994;263–6.
• Lam W, Igawa A, Kurdoghlian A, Jelloian L, Brown A, Thompson M, et al. 44-GHz High-Efficiency InP-HEMT MMIC Power Amplifier. IEEE Microwave and Guided Wave Letters. 1994 Jan 1;4(8):277–8.
• Matloubian M, Larson L, Brown A, Jelloian L, Nguyen L, Lui M, et al. InP-based HEMTs for the realization of ultra-high efficiency millimeterwave power amplifiers. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. 1993 Dec 1;520–7.
• Kurdoghlian A, Lam W, Chou C, Jellian L, Igawa A, Matloubian M, et al. High-efficiency InP-based HEMT MMIC power amplifier. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 1993 Dec 1;375–7.
• Zakharov ND, Liliental-Weber Z, Swider W, Washburn J, Brown AS, Metzger R. Ordering in InGaAs/InAlAs layers. Journal of Electronic Materials. 1993 Dec 1;22(12):1495–8.
• Zakharov ND, Liliental-Weber Z, Swider W, Brown AS, Metzger R. Structure of Ga0.47In0.53As epitaxial layers grown on InP substrates at different temperatures. Applied Physics Letters. 1993 Dec 1;63(20):2809–11.
• Brown AS, Henige JA, Schmitz AE, Larson LE. Effect of growth conditions on the electrical and optical properties of AlxIn1-xAs (0.48<x<0.7)-Ga0.47In 0.53As heterostructures. Applied Physics Letters. 1993 Dec 1;62(1):66–8.
• Matloubian M, Brown AS, Nguyen LD, Melendes MA, Larson LE, Delaney MJ, et al. High-Power V-Band AlInAs/GaInAs on InP HEMT's. IEEE Electron Device Letters. 1993 Jan 1;14(4):188–9.
• Rosenbaum SE, Jelloian LM, Larson LE, Mishra UK, Pierson DA, Thompson MS, et al. A 2-GHz Three-Stage AlInAs—GaInAs—InP HEMT MMIC Low-Noise Amplifier. IEEE Microwave and Guided Wave Letters. 1993 Jan 1;3(8):265–7.
• Matloubian M, Brown AS, Nguyen LD, Melendes MA, Larson LE, Delaney MJ, et al. 20-GHz High-Efficiency AlInAs-GalnAs on InP Power HEMT. IEEE Microwave and Guided Wave Letters. 1993 Jan 1;3(5):142–4.
• Brown AS, Metzger RA, Henige JA. Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1993;11(3):817–9.
• Matloubian M, Jelloian LM, Brown AS, Nguyen LD, Larson LE, Delaney MJ, et al. V-Band High-Efficiency High-Power AlInAs/GaInAs/InP HEMT’s. IEEE Transactions on Microwave Theory and Techniques. 1993 Jan 1;41(12):2206–10.
• Rosenbaum SE, Jelloian LM, Brown AS, Thompson MA, Matloubian M, Larson LE, et al. A 213 GHz AlInAs/GalnAs/InP HEMT MMIC Oscillator. Technical Digest - International Electron Devices Meeting, IEDM. 1993 Jan 1;924–6.
• Metzger RA, Brown AS, McCray LG, Henige JA. Structural and electrical properties of low temperature GaInAs. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1993;11(3):798–801.
• Brown JJ, Brown AS, Rosenbaum SE, Schmitz AS, Matloubian M, Larson LE, et al. Study of the dependence of Ga 0.47 In 0.53 As/Al x In 1-x As power HEMT breakdown voltage on schottky layer design and device layout. In: Device Research Conference - Conference Digest, DRC. 1993.
• Matloubian M, Jelloian LM, Brown AS, Nguyen LD, Larson LE, Delaney MJ, et al. V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs. IEEE MTT-S International Microwave Symposium Digest. 1993 Jan 1;2:535–7.
• Lam W, Kurdoghlian A, Igawa A, Matloubian M, Larson L, Chou C, et al. High-Efficiency InP-Based HEMT MMIC Power Amplifier for Q-Band Applications. IEEE Microwave and Guided Wave Letters. 1993 Jan 1;3(11):420–2.
• Brown JJ, Brown AS, Rosenbaum SE, Schmitz AS, Matloubian M, Larson LE, et al. Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout. IEEE Trans Electron Devices (USA). 1993;40(11):2111–2.
• Larson LE, Matloubian MM, Brown JJ, Brown AS, Rhodes R, Crampton D, et al. AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers. Electronics Letters. 1993 Jan 1;29(15):1324–6.
• Schramm JE, Hu EL, Merz JL, Brown JJ, Melendes MA, Thompson MA, et al. Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1993;11(6):2280–3.
• Nguyen LD, Brown AS, Thompson MA, Jelloian LM. 50 nm InP high electron mobility transistors. Microw J (USA). 1993;36(6):96,98,101.
• Kiziloglu K, Hashemi MM, Yin LW, Li YJ, Petroff PM, Mishra UK, et al. Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping. Journal of Applied Physics. 1992 Dec 1;72(8):3798–802.
• Nguyen LD, Brown AS, Thompson MA, Jelloian LM, Larson LE, Matloubian M. 650-angstrom self-aligned-gate pseudomorphic Al_0.48In_0.52As/Ga_0.20In_0.80As high electron mobility transistors. Electron device letters. 1992;13(3):143–5.
• Nguyen LD, Brown AS, Thompson MA, Jelloian LM, Larson LE, Matloubian M. 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors. IEEE Electron Device Letters. 1992;13(3):143–5.
• Brown AS, Nguyen LD, Metzger RA, Schmitz AE, Henige JA. Growth and properties of high mobility strained inverted AlInAs-GaInAs modulation doped structures. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1992;10(2):1017–9.
• Nguyen LD, Brown AS, Thompson MA, Jelloian LM. 50-nm Self-Aligned-Gate Pseudomorphic AlInAs/ GaInAs High Electron Mobility Transistors. IEEE Transactions on Electron Devices. 1992 Jan 1;39(9):2007–14.
• Brown AS, Nguyen LD, Metzger RA, Matloubian M, Schrnitz AE, Lui M, et al. Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers. Institute of Physics Conference Series. 1991 Dec 1;120:281–6.
• Matloubian M, Nguyen LD, Brown AS, Larson LE, Melendes MA, Thompson MA. High power and high efficiency AlInAs/GaInAs on InP HEMTs. IEEE MTT-S International Microwave Symposium Digest. 1991 Dec 1;2:721–4.
• Brown AS, Metzger RA, Henige JA, Nguyen L, Lui M, Wilson RG. Effect of Si movement on the electrical properties of inverted AlInAs-GaInAs modulation doped structures. Applied Physics Letters. 1991 Dec 1;59(27):3610–2.
• Metzger RA, Brown AS, Stanchina WE, Lui M, Wilson RG, Kargodorian TV, et al. Growth and characterization of low temperature AlInAs. Journal of Crystal Growth. 1991 May 2;111(1–4):445–9.
• Brown AS, Spackman MA. A model study of the κ-refinement procedure for fitting valence electron densities. Acta Crystallogr A, Found Crystallogr (Denmark). 1991;A47:21–9.
• Brown AS. An overview of microwave waveguide technology. Electrotechnology (UK). 1991;2(3):120–2.
• Schmitz AE, Nguyen LD, Brown AS, Metzger RA. IIIB-3 InP-Based Inverted High Electron Mobility Transistors. IEEE Transactions on Electron Devices. 1991 Jan 1;38(12):2702.
• Mishra UK, Brown AS, Jelloian LM, Thompson M, Rosenbaum SE, Nguyen LD, et al. Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. Proceedings of SPIE - The International Society for Optical Engineering. 1990 Dec 1;1288:21–9.
• Brown AS. The effects and implications of ESD on semiconductor technology. Electrotechnology (UK). 1990;1(4):217–9.
• Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, et al. GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology. Proceedings of the Custom Integrated Circuits Conference. 1989 Dec 1;
• Mishra UK, Brown AS, Jelloian LM, Thompson M, Nguyen LD, Rosenbaum SE. Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs. Technical Digest - International Electron Devices Meeting. 1989 Dec 1;101–4.
• Nguyen L, Brown A, Delaney M, Mishra U, Larson L, Jelloian L, et al. Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs. Technical Digest - International Electron Devices Meeting. 1989 Dec 1;105–8.
• Delaney MJ, Brown AS, Mishra UK, Chou CS, Larson LE, Nguyen L, et al. Low temperature MBE growth of GaAs and AlInAs for high speed devices. 1989 Dec 1;64–72.
• Brown AS, Chou CS, Delaney MJ, Hooper CE, Jensen JF, Larson LE, et al. Low-temperature buffer AlInAs/GaInAs on InP HEMT technology for ultra-high-speed integrated circuits. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 1989 Dec 1;143–6.
• Mishra UK, Brown AS, Jelloian LM, Melendes MA, Thompson M, Rosenbaum SE, et al. Impact of buffer layer design on the performance of AlInAs-GaInAs HEMT's. IEEE Transactions on Electron Devices. 1989 Nov 1;36(11 pt 1):2616.
• Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, et al. GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology. Proceedings of the Custom Integrated Circuits Conference. 1989 May 1;
• Jensen JF, Mishra UK, Brown AS, Salmon LG, Delaney MJ. Ultrahigh speed static and dynamic frequency divider circuits. Microwave journal. 1989 Mar 1;32(3).
• Mishra UK, Brown AS, Jelloian LM, Melendes MA, Thompson M, Rosenbaum SE, et al. Impact of buffer layer design on the performance of AlInAs-GaInAs HEMT's. IEEE Transactions on Electron Devices. 1989;36(11 pt 1):2616-.
• Brown AS, Delaney MJ, Singh J. The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1989;7(2):384–7.
• Jensen JF, Mishra UK, Brown AS, Salmon LG, Delaney MJ. Ultrahigh speed static and dynamic frequency divider circuits. Microw J (USA). 1989;32(3):131–2.
• Mishra UK, Jensen JF, Rensch DB, Brown AS, Stanchina WE, Trew RJ, et al. Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits. Electron device letters. 1989;10(10):467–9.
• Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, et al. Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications. IEEE Electron Device Letters. 1989 Jan 1;10(8):355–7.
• Brown AS, Chou CS, Hooper CE, Melendes MA, Thompson M, Larson LE, et al. AlInAs-GaInAs HEMT’s Utilizing Low-Temperature Alin As Buffers Grown by MBE. IEEE Electron Device Letters. 1989 Jan 1;10(12):565–7.
• Mishra UK, Brown AS, Delaney MJ, Greiling PT, Krumm CF. The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications. IEEE Transactions on Microwave Theory and Techniques. 1989 Jan 1;37(9):1279–85.
• Brown AS, Mishra UK, Rosenbaum SE. The Effect of Interface and Alloy Quality on the DC and RF Performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's. IEEE Transactions on Electron Devices. 1989 Jan 1;36(4):641–5.
• Jensen JF, Mishra UK, Brown AS, Beaubien RS, Thompson MA, Jelloian LM. 25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 1988 Dec 1;31:268–9.
• Mishra UK, Brown AS. InGaAs/AlInAs HEMT technology for millimeter wave applications. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 1988 Dec 1;97–100.
• Mishra UK, Brown AS, Rosenbaum SE. DC and RF performance of 0.1 μm gate length Al.48In.52As-Ga.38In.62As pseudomorphic HEMT's. In: Technical Digest - International Electron Devices Meeting. 1988. p. 180–3.
• Mishra UK, Jensen JF, Rensch DB, Brown AS, Pierce MW, McCray LG, et al. 48 GHz AlInAs/GaInAs heterojunction bipolar transistors. Technical Digest - International Electron Devices Meeting. 1988 Dec 1;873–5.
• Brown AS, Henige JA, Delaney MJ. Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures. Applied Physics Letters. 1988 Dec 1;52(14):1142–3.
• Mishra UK, Brown AS, Jelloian LM, Hackett LH, Delaney MJ. High-Performance Submicrometer AlInAs-GalnAs HEMT's. IEEE Electron Device Letters. 1988 Jan 1;9(1):41–3.
• Mishra UK, Jensen JF, Brown AS, Thompson MA, Jelloian LM, Beaubien RS. Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology. IEEE Electron Device Letters. 1988 Jan 1;9(9):482–4.
• Brown AS, Mishra UK, Henige JA, Delaney MJ. The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1988;6(2):678–81.
• Mishra UK, Brown AS, Rosenbaum SE. DC and RF performance of 0.1 μm gate length Al_.48In_.52As-Ga_.38In_.62As pseudomorphic HEMT's. Technical Digest - International Electron Devices Meeting. 1988;180–3.
• Mishra UK, Brown AS, Rosenbaum SE, Hooper CE, Pierce MW, Delaney MJ, et al. Microwave Performance of AlInAs-GalnAs HEMT's with 0.2- and 0.1-μm Gate Length. IEEE Electron Device Letters. 1988 Jan 1;9(12):647–9.
• Brown AS, Mishra UK, Henige JA, Delaney MJ. The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality. Journal of Applied Physics. 1988 Jan 1;64(7):3476–80.
• Mishra UK, Brown AS, Rosenbaum SE, Delaney MJ, Vaughn S, White K. IIIB-4 Noise Performance of Submicrometer AlInAs-GaInAs HEMT's. IEEE Transactions on Electron Devices. 1988 Jan 1;35(12):2441.
• Hu YP, Petroff PM, Qian X, Brown AS. Substrate misorientation effects on the structure and electronic properties of GaInAs-AlInAs interfaces. Applied Physics Letters. 1988 Jan 1;53(22):2194–6.
• Mishra UK, Beaubien RS, Delaney MJ, Brown AS, Hackett LH. LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE. 1987 Dec 1;177–89.
• Mishra UK, Brown AS, Jelloian LM, Hackett LH, Delaney MJ. HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S. IEEE Transactions on Electron Devices. 1987 Nov 1;ED-34(11).
• Griem HT, Hsieh KH, D’Haenens IJ, Delaney MJ, Henige JA, Wicks GW, et al. Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxy. Journal of Crystal Growth. 1987 Feb 2;81(1–4):383–90.
• Palmateer LF, Tasker PJ, Itoh T, Brown AS, Wicks GW, Eastman LF. Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets. Electronics Letters. 1987 Jan 1;23(1):53–5.
• Griem HT, Hsieh KH, D’Haenens IJ, Delaney MJ, Henige JA, Wicks GW, et al. Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1987;5(3):785–91.
• Mishra UK, Jensen JF, Brown AS, Beaubien RS, Jelloian LM. ULTRA-HIGH SPEED AlInAs-GaInAs HEMT TECHNOLOGY. Technical Digest - International Electron Devices Meeting. 1987 Jan 1;879–80.
• Mishra UK, Brown AS, Jelloian LM, Hackett LH, Delaney MJ. HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S. IEEE Transactions on Electron Devices. 1987;ED-34(11):4.
• Itoh T, Brown AS, Camnitz LH, Wicks GW, Berry JD, Eastman LF. DEPLETION- AND ENHANCEMENT-MODE Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7In//0//. //5//3As MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH A RECESSED GATE STRUCTURE. Institute of Physics Conference Series. 1986 Dec 1;(79):571–6.
• Mishra UK, Beaubien RS, Delaney MJ, Brown AS, Hackett LH. MBE GROWN GaAs MESFETS WITH ULTRA-HIGH G//M AND F//T. Technical Digest - International Electron Devices Meeting. 1986 Dec 1;829–31.
• Brown AS, Itoh T, Wicks G, Eastman LF. Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures. Journal of Applied Physics. 1986 Jan 1;60(10):3495–8.
• Brown AS, Wicks GW, Eastman LF. Mn redistribution in doped GaInAs. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1986;4(2):543–4.
• Itoh T, Brown AS, Camnitz LH, Wicks GW, Berry JD, Eastman LF. RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR. 1985 Dec 1;92–101.
• Brown AS, Palmateer SC, Wicks GW, Eastman LF, Calawa AR. The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE. Journal of Electronic Materials. 1985 May 1;14(3):367–78.
• Brown AS, Palmateer SC, Wicks GW, Eastman LF, Calawa AR, Hitzman C. HEAT TREATMENT OF FE-DOPED INP SUBSTRATES FOR THE GROWTH OF HIGHER PURITY GA//0 //. //4 //7 IN//0 //. //5 //3 AS BY MBE. 1984 Dec 1;36–40.
• Brown AS, Wicks GW, Eastman LF, Palmateer SC. DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES. Journal of Vacuum Science &amp; Technology B: Microelectronics Processing and Phenomena. 1983 Apr 1;2(2):194–6.

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